2SK2134 N-Channel MOSFET Transistor 200V 13A TO-220AB
The 2SK2134 N-channel MOS Field Effect Transistors specifically designed for high-voltage switching applications. These components are classified under a “Standard” quality grade, making them highly reliable choices for regular industrial use.
Features
- Low On-state Resistance
- Low Input Capacitance
- High Avalanche Capability
Specifications
Absolute Maximum Ratings (Ta = 25°C)
| Parameter | Symbol | Ratings | Unit |
|---|---|---|---|
| Drain to Source Voltage | VDSS | 200 | V |
| Gate to Source Voltage | VGSS | ±30 | V |
| Drain Current (DC) | ID(DC) | ±13 | A |
| Drain Current (Pulse)* | ID(pulse) | ±39 | A |
| Single Avalanche Current | IAS | 13 | A |
| Single Avalanche Energy | EAS | 33.8 | mJ |
| Total Power Dissipation (Ta = 25°C) | PT1 | 1.5 | W |
| Total Power Dissipation (Tc = 25°C) | PT2 | 70 | W |
| Channel Temperature | Tch | 150 | °C |
| Storage Temperature Range | Tstg | -55 to +150 | °C |
Electrical Characteristics (Ta = 25°C)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain to Source On-state Resistance | RDS(on) | VGS = 10 V, ID = 7.0 A | — | 0.3 | 0.4 | Ω |
| Gate to Source Cutoff Voltage | VGS(off) | VDS = 10 V, ID = 1 mA | 2.0 | — | 4.0 | V |
| Forward Transfer Admittance | |yfs| | VDS = 10 V, ID = 7.0 A | 2.0 | — | — | S |
| Drain Leakage Current | IDSS | VDS = 200 V, VGS = 0 | — | — | 100 | μA |
| Gate to Source Leakage Current | IGSS | VGS = ±30 V, VDS = 0 | — | — | ±100 | nA |
| Input Capacitance | Ciss | VDS = 10 V, VGS = 0, f = 1 MHz | — | 500 | — | pF |
| Output Capacitance | Coss | — | 230 | — | pF | |
| Reverse Transfer Capacitance | Crss | — | 60 | — | pF | |
| Turn-On Delay Time | td(on) | ID = 7.0 A, VGS(on) = 10 V, VDD = 100 V, RG = 10 Ω | — | 12 | — | ns |
| Rise Time | tr | — | 45 | — | ns | |
| Turn-Off Delay Time | td(off) | — | 35 | — | ns | |
| Fall Time | tf | — | 12 | — | ns | |
| Total Gate Charge | QG | ID = 13 A, VDD = 160 V, VGS = 10 V | — | 15 | — | nC |
| Gate to Source Charge | QGS | — | 3 | — | nC | |
| Gate to Drain Charge | QGD | — | 7 | — | nC |
Applications
- High-Voltage Switching Applications
- Computers and Office Equipment
- Communications Equipment
- Test and Measurement Instruments
- Audio and Visual Equipment
- Home Electronic Appliances
- Machine Tools and Personal Electronic Equipment
- Industrial Robots
Package Content
- 1 x 2SK2134 N-Channel MOSFET Transistor 200V 13A TO-220AB
