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SAMWHA Aluminum Electrolytic Capacitor 1000uF 100V 16x40mm Made in South Korea
20.00 ج.م20.00 ج.م× -
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2SK2225 N-Channel MOSFET Transistor 1500V 2A TO-3PFM
High-voltage N-Channel MOSFET (1500V, 2A) in a TO-3PFM package. Ideal for high-speed switching and regulators.
50.00 ج.م
متوفرالكود 3496300151011
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2SK2225 N-Channel MOSFET Transistor 1500V 2A TO-3PFM
The 2SK2225 is a high-voltage, N-channel MOSFET, engineered specifically for high-speed power switching applications. Boasting an exceptionally high breakdown voltage of 1500V, this component is ideally suited for robust power supplies, regulators, and converters where secondary breakdown resistance and minimal drive currents are paramount. It comes housed in an isolated, through-hole TO-3PFM package.
Features
- Ultra-High Breakdown Voltage
- High-Speed Switching
- Low Drive Current
- Enhanced Reliability
Specifications
| Specification Item | Symbol | Value / Rating | Unit | Test Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25°C) | ||||
| Drain to Source Voltage | VDSS | 1500 | V | — |
| Gate to Source Voltage | VGSS | ±20 | V | — |
| Drain Current | ID | 2 | A | — |
| Drain Peak Current | ID(pulse) | 7 | A | PW ≤ 10 μs, duty cycle ≤ 1% |
| Body to Drain Diode Reverse Drain Current | IDR | 2 | A | — |
| Channel Dissipation | Pch | 50 | W | Value at Tc = 25°C |
| Channel Temperature | Tch | 150 | °C | — |
| Storage Temperature | Tstg | -55 to +150 | °C | — |
| Electrical Characteristics (Ta = 25°C) | ||||
| Drain to Source Breakdown Voltage | V(BR)DSS | 1500 (Min) | V | ID = 10 mA, VGS = 0 |
| Static Drain to Source On State Resistance | RDS(on) | 9 (Typ) / 12 (Max) | Ω | ID = 1 A, VGS = 15 V (Pulse Test) |
| Gate to Source Cutoff Voltage | VGS(off) | 2.0 (Min) to 4.0 (Max) | V | ID = 1 mA, VDS = 10 V |
| Forward Transfer Admittance | |yfs| | 0.45 (Min) / 0.75 (Typ) | S | ID = 1 A, VDS = 20 V (Pulse Test) |
| Zero Gate Voltage Drain Current | IDSS | 500 (Max) | μA | VDS = 1200 V, VGS = 0 |
| Gate to Source Leak Current | IGSS | ±1 (Max) | μA | VGS = ±20 V, VDS = 0 |
| Dynamic & Switching Characteristics (Ta = 25°C) | ||||
| Input Capacitance | C_{iss} | 990 (Typ) | pF | VDS = 10 V, VGS = 0, f = 1 MHz |
| Output Capacitance | Coss | 125 (Typ) | pF | |
| Reverse Transfer Capacitance | Crss | 60 (Typ) | pF | |
| Turn-on Delay Time | td(on) | 17 (Typ) | ns | ID = 1 A, VGS = 10 V, RL = 30 Ω |
| Rise Time | tr | 50 (Typ) | ns | |
| Turn-off Delay Time | td(off) | 150 (Typ) | ns | |
| Fall Time | tf | 50 (Typ) | ns | |
| Body to Drain Diode Characteristics (Ta = 25°C) | ||||
| Body to Drain Diode Forward Voltage | VDF | 0.9 (Typ) | V | IF = 2 A, VGS = 0 |
| Body to Drain Diode Reverse Recovery Time | trr | 1750 (Typ) | ns | IF = 2 A, VGS = 0, diF/dt = 100 A/μs |
Applications
- Switching Regulators
- High-Speed DC-DC Converters
- High-Speed Power Switching Circuits
Package Content
- 1 x 2SK2225 N-Channel MOSFET Transistor 1500V 2A TO-3PFM
DataSheet
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