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PIC16F1829-I/SS 8KB 1.8V~5.5V PIC 1KB 32MHz FLASH 17 SSOP-20 Microcontroller
150.00 ج.م150.00 ج.م×
50N06 N-Channel MOSFET Transistor 60V 50A
50N06 N-Channel MOSFET Transistor is a high-performance power transistor designed for efficient switching and amplification in electronic circuits.
20.00 ج.م
متوفرالكود 300000012042
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50N06 N-Channel MOSFET Transistor 60V 50A
The 50N06 N-Channel MOSFET Transistor is a high-performance semiconductor device engineered for applications requiring robust current and voltage handling. With a maximum drain-source voltage of 60V and a continuous drain current of 50A, this MOSFET is ideally suited for demanding applications such as automotive systems, DC/DC converters, and power management circuits in portable and battery-operated devices.
Features:
- High current capability (50A).
- Low on-resistance for minimal power loss.
- High efficiency for switching applications.
- Reliable performance in power regulation circuits.
- Suitable for both high- and low-side switching.
Specifications:
| TYPE | DESCRIPTION |
| Series | QFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current – Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
|
RDS(on) |
0.022Ω @ VGS = 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1540 pF @ 25 V |
| FET Feature | – |
| Power Dissipation (Max) | 120W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Base Product Number | FQP50 |
Pin Configuration:
Application:
- Automotive systems.
- DC/DC converters.
- High-efficiency switching for power management in portable and battery-operated products.
Package Include:
- 1x 50N06 N-Channel MOSFET Transistor 60V 50A.
Data Sheet:
FQP50N06
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