60R190QS N-channel MOSFET Transistor
A high-efficiency 600V N-channel MOSFET. Its low 0.19Ω on-resistance and optimized switching reduce power loss. Ideal for PFC and switching supplies.
20.00 ج.م
متوفرالكود 3496300121083
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60R190QS N-channel MOSFET Transistor
The 60R190QS is a high-voltage N-channel power MOSFET developed using Magnachip’s state-of-the-art super junction technology. This advanced design results in a transistor with exceptionally low on-resistance and gate charge, leading to significantly improved efficiency. By optimizing charge coupling, this MOSFET minimizes switching losses and electromagnetic interference (EMI), making it a user-friendly choice for designers of high-performance electronics. It is an ideal component for a wide range of switching applications, including power supplies and adapters.
Features
- Low Power Loss: Achieved through high-speed switching and very low on-resistance.
- High Efficiency: Advanced super junction technology minimizes energy waste.
- User-Friendly Design: Optimized for low EMI and minimal switching loss.
- Robust and Reliable: 100% avalanche tested to ensure durability under stress.
- Environmentally Friendly: Comes in a green package with lead-free plating and is halogen-free.
Specifications
| Parameter | Symbol | Value | Unit | Test Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) | ||||
| Drain-Source Voltage | VDSS | 600 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 20 | A | Tc = 25°C |
| 13 | A | Tc = 100°C | ||
| Pulsed Drain Current | IDM | 60 | A | Pulse width limited by Tj,max |
| Power Dissipation | PD | 33 | W | |
| Single-Pulse Avalanche Energy | EAS | 420 | mJ | |
| Maximum Operating Junction Temperature | Tj | 150 | °C | |
| Storage Temperature Range | Tstg | -55 to 150 | °C | |
| Static Electrical Characteristics (at Tc=25°C) | ||||
| Drain-Source On-Resistance (Max) | RDS(on),max | 0.19 | Ω | VGS = 10V, ID = 9.5A |
| Gate Threshold Voltage | VGS(th) | 2 (Min), 3 (Typ), 4 (Max) | V | VDS = VGS, ID = 0.25mA |
| Zero Gate Voltage Drain Current | IDSS | 1 (Max) | µA | VDS = 600V, VGS = 0V |
| Gate Leakage Current | IGSS | 100 (Max) | nA | VGS = ±30V, VDS = 0V |
| Dynamic Characteristics (at Tc=25°C) | ||||
| Total Gate Charge (Typical) | Qg,typ | 36 | nC | VGS = 10V, VDS = 480V, ID = 20A |
| Input Capacitance (Typical) | Ciss | 1336 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance (Typical) | Coss | 1352 | pF | |
| Reverse Transfer Capacitance (Typical) | Crss | 52 | pF | |
| Thermal Characteristics | ||||
| Thermal Resistance, Junction-to-Case (Max) | Rthjc | 3.75 | °C/W | |
| Thermal Resistance, Junction-to-Ambient (Max) | Rthja | 75 | °C/W | |
Applications
- Power Factor Correction (PFC) Power Supply Stages
- General Switching Applications
- Adapters and Chargers
- DC-DC Converters
DataSheet
| الوزن | 1 جرام |
|---|
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