FDA70N20 MOSFET Transistor 70A 200V TO-3PN
The FDA70N20 is part of the UniFET™ MOSFET high-voltage family, utilizing advanced planar stripe and DMOS technology. This MOSFET is specifically engineered to minimize on-state resistance while delivering enhanced switching performance and superior avalanche energy strength. It is an ideal choice for high-efficiency switching power converter applications.
✅Features
- Low On-Resistance
- Low Gate Charge
- Low Reverse Transfer Capacitance
- Reliability
- High Power Handling
📜📚Specifications
Absolute Maximum Ratings (TC = 25°C)
| Symbol |
Parameter |
Value |
Unit |
| VDSS |
Drain-Source Voltage |
200 |
V |
| ID |
Continuous Drain Current (TC = 25°C) |
70 |
A |
| ID |
Continuous Drain Current (TC = 100°C) |
45 |
A |
| IDM |
Pulsed Drain Current (Note 1) |
280 |
A |
| VGSS |
Gate-Source Voltage |
±30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
1742 |
mJ |
| IAR |
Avalanche Current (Note 1) |
70 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
41.7 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD |
Power Dissipation (TC = 25°C) |
417 |
W |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
Thermal Characteristics
| Symbol |
Parameter |
Max. |
Unit |
| RθJC |
Thermal Resistance, Junction-to-Case |
0.3 |
°C/W |
| RθCS |
Thermal Resistance, Case-to-Sink (Typ.) |
0.24 |
°C/W |
| RθJA |
Thermal Resistance, Junction-to-Ambient |
40 |
°C/W |
Electrical Characteristics (TC = 25°C)
| Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
| BVDSS |
Drain-Source Breakdown Voltage |
VGS=0V, ID=250μA |
200 |
– |
– |
V |
| IDSS |
Zero Gate Voltage Drain Current |
VDS=200V, VGS=0V |
– |
– |
1 |
μA |
| VGS(th) |
Gate Threshold Voltage |
VDS=VGS, ID=250μA |
3.0 |
– |
5.0 |
V |
| RDS(on) |
Static Drain-Source On-Resistance |
VGS=10V, ID=35A |
– |
0.029 |
0.035 |
Ω |
| Ciss |
Input Capacitance |
VDS=25V, VGS=0V, f=1MHz |
– |
3050 |
3970 |
pF |
| Coss |
Output Capacitance |
VDS=25V, VGS=0V, f=1MHz |
– |
750 |
980 |
pF |
| Crss |
Reverse Transfer Capacitance |
VDS=25V, VGS=0V, f=1MHz |
– |
89 |
130 |
pF |
| Qg |
Total Gate Charge |
VDS=160V, ID=70A, VGS=10V |
– |
66 |
86 |
nC |
💻Applications
- Power Supplies
- Power Conversion
- Display Technology
- Lighting
🎁Package Content
- 1 x FDA70N20 MOSFET Transistor 70A 200V TO-3PN
📖DataSheet
