IRF840 N-Channel MOSFET 8A 500V 0.85Ω TO-220AB
The IRF840 is a robust N-channel power MOSFET presented in a TO-220AB through-hole package. It reads as a purpose-built switching device: compact, solid, and engineered to sit on a heatsink while handling substantial voltages. The package and lead layout give immediate confidence that the part is intended for high-voltage switching tasks where thermal management and mechanical stability matter.
Handling the IRF840 in a circuit, you notice it is built for duty – capable of standing off high drain-to-source voltages and switching quickly. The die and package balance ruggedness with reasonably fast transitions, so it feels like a pragmatic choice for designers who need a dependable, conventional MOSFET rather than an ultra-low-RDS(on) logic-level device.
On the board, the IRF840 functions as a clear building block for mid-power converters and inverters: it brings predictable switching behavior, a noticeable body diode character, and established thermal performance. Its overall presence suggests a component chosen for reliability and familiarity in power-electronic designs.
Features
- N-Channel Power MOSFET
- Continuous Drain Current (ID): 8A
- The gate threshold voltage (VGS-th) is 10V (limit = ±20V)
- Drain to Source Breakdown Voltage: 500V
- Drain Source Resistance (RDS) is 0.85 Ohms
- Rise time and fall time is 23nS and 20nS
- Available in To-220 package
Specifications
| Specification | Value / Notes |
|---|---|
| Part / Package: | IRF840 — N-Channel MOSFET, TO-220AB |
| Drain-Source Voltage (VDS): | 500 V |
| Gate-Source Voltage (VGS): | ±20 V (max) |
| Continuous Drain Current (ID): | 8.0 A (TC = 25 °C); 5.1 A (TC = 100 °C) |
| Pulsed Drain Current (IDM): | 32 A (pulse) |
| Drain-Source On-Resistance RDS(on): | 0.85 Ω (VGS = 10 V, ID = 4.8 A) |
| Gate-Source Threshold VGS(th): | 2.0 – 4.0 V (ID = 250 µA) |
| Maximum Power Dissipation (TC = 25 °C): | 125 W |
| Single Pulse Avalanche Energy (EAS): | 510 mJ |
| Peak Diode dV/dt: | 3.5 V/ns |
| Total Gate Charge Qg (VGS = 10 V): | Max 63 nC (Qgs 9.3 nC, Qgd 32 nC) |
| Input Capacitance Ciss (f = 1 MHz): | ≈ 1300 pF |
| Coss / Crss: | ≈ 310 pF / 120 pF |
| Switching (typ.) td(on) / tr / td(off) / tf: | 14 ns / 23 ns / 49 ns / 20 ns (test conditions apply) |
| Body diode continuous current / pulsed: | 8.0 A / 32 A (pulsed) |
| Body diode reverse recovery trr: | Typ 460 ns, Max 970 ns |
| Operating / Storage Temp: | TJ: −55 to +150 °C |
| Thermal Resistance RthJC / RthCS: | RthJC ≈ 1.0 °C/W ; RthCS ≈ 0.50 °C/W |
| Mounting / Soldering: | Mounting torque and solder peak: see datasheet (solder peak 300 °C, 10 s) |
IRF840 N-Channel Power Mosfet IRF840 Pinout
The IRF840 is an N-Channel Power MOSFET that can switch loads up to 500V. The Mosfet could switch loads that consume up to 8A, it can turned on by providing a gate threshold voltage of 10V across the Gate and Source pin.
Pin Configuration
|
Pin Number |
Pin Name |
Description |
|
1 |
Source |
Current flows out through Source (maximum 8A) |
|
2 |
Gate |
Controls the biasing of the MOSFET (Threshold voltage 10V) |
|
3 |
Drain |
Current flows in through Drain |
Footprint Diagram
Applications
- Switching high-power devices
- Inverter Circuits
- DC-DC Converters
- Control the speed of motors
- LED dimmers or flashers
- High-Speed switching applications
Package Contents
- 1x IRF840 N-Channel MOSFET 8A 500V 0.85Ω TO-220AB
