IRFBE30 N-Channel Power MOSFET Transistor 800V 4.1A TO-220
IRFBE30 N-Channel Power MOSFET 800V 4.1A TO-220 — high-voltage switch MOSFET for SMPS, motor drives and industrial power applications.
45.00 ج.م
متوفرالكود 34963001421710
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IRFBE30 N-Channel Power MOSFET Transistor 800V 4.1A TO-220
The IRFBE30 from Vishay Siliconix is a third-generation N-channel power MOSFET in a TO-220AB package engineered for rugged high-voltage switching and fast, efficient operation in power conversion and industrial systems. It combines an 800 V drain-to-source rating with low thermal resistance in the TO-220AB package, repetitive-avalanche capability, and fast switching characteristics that simplify gate drive requirements and ease paralleling for higher current applications. This part is well suited for offline switch-mode power supplies, lighting and ballast circuits, motor controllers, and other high-voltage power stages where reliability and predictable switching behavior matter.
Features
- 800 V drain-to-source breakdown voltage for high-voltage switching applications.
- Low on-resistance specified at VGS = 10 V for efficient conduction.
- Repetitive avalanche rated for rugged operation under inductive loads.
- Fast switching with controlled gate charge for predictable gate-drive design.
- Ease of paralleling and simple drive requirements for scalable power stages.
- Standard TO-220AB package with low thermal resistance and heatsink mounting tab.
Specifications
| ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) | |||
|---|---|---|---|
| PARAMETER | SYMBOL | LIMIT | UNIT |
| Drain-source voltage | VDS | 800 | V |
| Gate-source voltage | VGS | ±20 | V |
| Continuous drain current VGS at 10 V |
ID | 4.1 (TC = 25 °C) | A |
| 2.6 (TC = 100 °C) | |||
| Pulsed drain currenta | IDM | 16 | A |
| Linear derating factor | — | 1.0 | W/°C |
| Single pulse avalanche energyb | EAS | 260 | mJ |
| Repetitive avalanche currenta | IAR | 4.1 | A |
| Repetitive avalanche energya | EAR | 13 | mJ |
| Maximum power dissipation TC = 25 °C |
PD | 125 | W |
| Peak diode recovery dV/dtc | dV/dt | 2.0 | V/ns |
| Operating junction and storage temperature range | TJ, Tstg | -55 to +150 | °C |
| Soldering recommendations (peak temperature)d For 10 s |
— | 300 | °C |
| Mounting torque 6-32 or M3 screw |
— | 10 | lbf·in |
| — | 1.1 | N·m | |
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. V DD = 50 V, starting TJ = 25 °C, L = 29 mH, R g = 25 Ω, IAS = 4.1 A (see fig. 12)
c. I SD ≤ 4.1 A, dI/dt ≤ 100 A/μs, VDD ≤ 600, TJ ≤ 150 °C
d. 1.6 mm from case
Applications
- High-voltage switched-mode power supplies (offline SMPS) for AC/DC conversion.
- Motor drive and inverter stages for industrial equipment.
- Lighting ballasts and high-voltage lamp drivers.
- Telecom and UPS power conversion modules.
- Any high-voltage switching or clamp circuits requiring repetitive avalanche capability and TO-220 mounting.
Documents
| Datasheet | IRFBE30 |
| CAD Files | KiCAD |
| الوزن | 2 جرام |
|---|---|
| الأبعاد | 30 × 10 × 5 ميليميتر |
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