S9015 Key Features
- High Total Power Dissipation.(PC=0.45W)
- High hFE and Good Linearity
Specifications
| Attribute | Value |
| Category | Transistors/Bipolar Transistors – BJT |
| Datasheet | Jiangsu Changjing Electronics Technology Co., Ltd. S9015 |
| RoHS | |
| Collector Cut-Off Current (Icbo) | 50nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Power Dissipation (Pd) | 450mW |
| Collector Current (Ic) | 100mA |
| DC Current Gain (hFE@Ic,Vce) | 300@1mA,5V |
| Transition Frequency (fT) | 100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@100mA,10mA |
| Transistor Type | PNP |
| Operating Temperature | +150℃@(Tj) |
Application
- General Purpose Switching and Amplification
