13N65 N-Channel Power MOSFET Transistor 600V 13A TO-220F
A high-voltage 13N65 N-Channel MOSFET commonly used in switch-mode power supplies, motor control circuits, inverters, and high-speed power switching applications.
25.00 EGP
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The 13N65 N-Channel Power MOSFET is a high-performance power transistor designed for efficient switching and power management in high-voltage electronic circuits. With its ability to handle substantial voltage and current levels, it is widely used in power supplies, DC-DC converters, motor drivers, and industrial control systems. The TO-220F fully insulated package provides convenient mounting and improved electrical isolation for safer circuit design.
Engineered for fast switching operation and low conduction losses, the 13N65 MOSFET helps improve overall system efficiency while reducing heat generation. Its rugged design, avalanche capability, and reliable performance make it suitable for demanding applications including power conversion, renewable energy systems, battery chargers, and various high-frequency switching circuits.
Features:
- N-Channel enhancement mode MOSFET.
- Fast switching performance.
- Low gate charge design.
- Low on-state resistance.
- High voltage switching capability.
- High current handling capability.
- Avalanche rugged construction.
- Improved dv/dt capability.
- Suitable for high-frequency operation.
- Fully insulated TO-220F package.
- High efficiency power switching.
- Reliable thermal performance.
- RoHS compliant.
Specifications:
| SYMBOL | PARAMETER | TEST CONDITIONS | VALUE | UNIT |
|---|---|---|---|---|
| VDSS | Drain to Source voltage | TJ=25∘C to 150∘C | 600 | V |
| VDGR | Drain to Gate voltage | RGS=20 kΩ | 600 | V |
| VGS | Gate to Source voltage | — | ±30 | V |
| ID | Continuous Drain Current | TC=25∘C | 13 | A |
| TC=100∘C | 8.2 | A | ||
| IDM | Pulsed Drain current (Note 1) | — | 39 | A |
| IAR | Avalanche current (Note 1) | — | 4.3 | A |
| EAR | Repetitive avalanche energy (Note 1) | IAR=4.3 A, RGS=50 Ω, VGS=10 V | 1.2 | mJ |
| EAS | Single pulse avalanche energy (Note 2) | IAS=4.3 A | 235 | mJ |
| dv/dt | MOSFET dv/dt ruggedness | — | 100 | V/ns |
| Peak diode recovery dv/dt (Note 3) | — | 20 | V/ns | |
| PD | Total power dissipation (Derate above 25∘C) | TC=25∘C, TO-220AB | 116 (0.93) | W (W/°C) |
| TC=25∘C, TO-220F | 34 (0.27) | W (W/°C) | ||
| TJ | Operation junction temperature | — | −55 to 150 | °C |
| TSTG | Storage temperature | — | −55 to 150 | °C |
| TL | Maximum soldering temperature, for 10 seconds | 1.6 mm from case | 300 | °C |
| — | Mounting torque | #6-32 or M3 screw | 10 (1.1) | lbf·in (N·m) |
Pinout:
| Pin | Name | Description |
|---|---|---|
| 1 | Gate (G) | Controls MOSFET switching |
| 2 | Drain (D) | High-power current path |
| 3 | Source (S) | Current return path |
Applications:
- Switch Mode Power Supplies (SMPS).
- AC-DC Power Converters.
- DC-DC Converters.
- PWM Motor Controllers.
- Power Inverters.
- Battery Chargers.
- Industrial Automation Equipment.
- Solar Power Systems.
- UPS Systems.
- LED Power Drivers.
- High-Voltage Switching Circuits.
- Bridge Switching Circuits.
- General-Purpose Power Switching.
Package Includes:
- 1x 13N65 N-Channel Power MOSFET Transistor 600V 13A TO-220F.