2N3019 BJT Transistor NPN 80V 1A 100MHz Through Hole TO-39

2N3019 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

2N3019 Pin Configuration

Features / Technical Specifications

• Package Type: TO-39
• Transistor Type: NPN
• Max Collector Current(I_C): 1A or 1000mA
• Max Collector-Emitter Voltage (V_CE): 80V
• Max Collector-Base Voltage (V_CB): 140V
• Max Emitter-Base Voltage (VEBO): 7V
• Max Collector Dissipation (Pc): 5 Watt
• Max Transition Frequency (fT):  100 MHz
• Minimum & Maximum DC Current Gain (h_FE): 15 – 300
• Max Storage & Operating temperature Should Be: -65 to +200 Centigrade

Applications

• Switching Loads under 800mA
• Audio Amplification
• Signal Amplification
• RF & Radio Circuits
• Darlington Pairs
• Many Other General Purpose Applications

2N3019 Datasheet