2N3055 NPN Power Transistor 60V 15A TO-3
The 2N3055 is one of the most widely used NPN silicon power transistors in the electronics industry. Designed for high-current and medium-voltage applications, it is housed in a robust TO-3 metal package that provides excellent thermal performance and mechanical durability. The transistor is suitable for power switching circuits, series and shunt voltage regulators, audio power amplifiers, and general-purpose power control systems.
Thanks to its ability to handle high collector current and significant power dissipation, the 2N3055 remains a popular choice for educational projects, industrial equipment, laboratory power supplies, battery chargers, and audio amplifier designs. Its proven reliability, wide availability, and ease of use make it a preferred component for both professional engineers and electronics hobbyists.
Features:
- High-current NPN power transistor.
- Rugged TO-3 metal package.
- Excellent thermal performance.
- Suitable for linear and switching applications.
- Reliable operation under heavy loads.
- Designed for power amplification.
- Suitable for voltage regulation circuits.
- High power dissipation capability.
- Durable metal case construction.
- Widely used and readily available.
- Suitable for industrial and educational applications.
- Good gain characteristics for power circuits.
- Compatible with heat sink mounting.
Specifications:
| Specification | Value |
|---|---|
| Product Type: | NPN Power Transistor |
| Model Number: | 2N3055 |
| Transistor Material: | Silicon |
| Technology: | Epitaxial-Base Planar |
| Package Type: | TO-3 Metal Case |
| Collector-Base Voltage VCBO: | 100V |
| Collector-Emitter Voltage VCER: | 70V |
| Collector-Emitter Voltage VCEO: | 60V |
| Emitter-Base Voltage VEBO: | 7V |
| Collector Current IC: | 15A |
| Base Current IB: | 7A |
| Total Power Dissipation Ptot: | 115W at Tc ≤ 25°C |
| Storage Temperature Tstg: | -65°C to 200°C |
| Maximum Junction Temperature Tj: | 200°C |
| Thermal Resistance Junction-Case Rthj-case: | 1.5°C/W Max |
| Collector Cut-off Current ICEX: | 1mA Max at VCE = 100V |
| Collector Cut-off Current ICEX at Tj = 150°C: | 5mA Max at VCE = 100V |
| Collector Cut-off Current ICEO: | 0.7mA Max at VCE = 30V |
| Emitter Cut-off Current IEBO: | 5mA Max at VEB = 7V |
| Collector-Emitter Sustaining Voltage VCEO(sus): | 60V Min |
| Collector-Emitter Sustaining Voltage VCER(sus): | 70V Min |
| Collector-Emitter Saturation Voltage VCE(sat): | 1V Max at IC = 4A, IB = 400mA |
| Collector-Emitter Saturation Voltage VCE(sat): | 3V Max at IC = 10A, IB = 3.3A |
| Base-Emitter Voltage VBE: | 1.8V Max |
| DC Current Gain hFE: | 20 to 70 at IC = 4A |
| DC Current Gain hFE: | 5 Min at IC = 10A |
| Transition Frequency fT: | 3MHz |
| Second Breakdown Collector Current Is/b: | 2.87A at VCE = 40V |
| Pulse Test Condition: | 300µs pulse duration, 1.5% duty cycle |
Pin Configuration:
| Pin Number | Pin Name | Description |
| 1 | Base (B) | Normally used as the trigger to turn ON the transistor |
| 2 | Emitter (E) | Normally connected to GROUND |
| TAB or CASE | Collector (C) | Normally connected to LOAD |
Applications:
- Linear power supplies.
- Voltage regulators.
- Audio power amplifiers.
- Power switching circuits.
- Motor control systems.
- Battery chargers.
- DC power control.
- Inverters.
- Laboratory equipment.
- Industrial control circuits.
- Educational electronics projects.
- High-current driver circuits.
- Series and shunt regulators.
- Power amplifier output stages.
Package Includes:
- 1x 2N3055 NPN Power Transistor 60V 15A TO-3.