2SA1441 Silicon PNP Power Transistor -60V -5A TO-220F
The 2SA1441 is a PNP power transistor optimized for high‑speed switching with excellent DC current gain and low saturation voltage. It features a collector‑emitter sustaining voltage of –60 V and can handle continuous collector currents up to –5 A (pulse current up to –10 A). The device exhibits a minimum DC current gain (hFE) of 100 at –1 A, with classification grades (L, M, K) offering gains from 100 to 400. Its low collector‑emitter saturation voltage (max –0.3 V at –3 A) reduces power dissipation, making it suitable for efficient switching regulators and driver stages.
Housed in a TO‑220F fully molded isolated package, the 2SA1441 simplifies heatsinking because the metal tab is not electrically connected to the collector, eliminating the need for insulating hardware in many applications. The total power dissipation is 25 W when case‑mounted (Tc = 25 °C) and 2 W in free air (Ta = 25 °C). With a current‑gain‑bandwidth product (fT) of 80 MHz, it can handle moderate‑frequency switching. Common applications include DC/DC converters, relay and solenoid drivers, and general‑purpose power switching circuits where a PNP transistor with high gain and low VCE(sat) is required.
Features:
- High DC current gain at low collector current.
- Low collector‑emitter saturation voltage.
- High collector‑emitter sustaining voltage.
- Fast switching speeds (short turn‑on, storage, and fall times).
- Suitable for high‑speed switching applications.
- TO‑220F fully isolated package (no electrical contact on tab).
- High current capability (5 A continuous, 10 A peak).
Specifications:
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | – | –100 | – | – | V |
| Collector-emitter sustaining voltage | VCEO(SUS) | Ic = –3A, Ib = –0.3A, L=1mH | –60 | – | – | V |
| Emitter-base voltage | VEBO | – | –7 | – | – | V |
| Collector current (continuous) | IC | – | –5 | – | – | A |
| Collector current (pulse) | ICM | – | –10 | – | – | A |
| Base current (continuous) | IB | – | –2.5 | – | – | A |
| Collector-emitter saturation voltage | VCE(sat)-1 | Ic = –3A, Ib = –0.15A | – | – | –0.3 | V |
| Collector-emitter saturation voltage | VCE(sat)-2 | Ic = –4A, Ib = –0.2A | – | – | –0.5 | V |
| Base-emitter saturation voltage | VBE(sat)-1 | Ic = –3A, Ib = –0.15A | – | – | –1.2 | V |
| Base-emitter saturation voltage | VBE(sat)-2 | Ic = –4A, Ib = –0.2A | – | – | –1.5 | V |
| DC current gain | hFE-1 | Ic = –0.5A, VCE = –2V | 100 | – | – | – |
| DC current gain | hFE-2 | Ic = –1.0A, VCE = –2V | 100 | – | 400 | – |
| DC current gain | hFE-3 | Ic = –3.0A, VCE = –2V | 60 | – | – | – |
| Collector cutoff current | ICBO | VCB = –60V, IE = 0 | – | – | –10 | µA |
| Output capacitance | Cob | VCB = –10V, f = 1MHz | – | 130 | – | pF |
| Current-gain-bandwidth product | fT | Ic = –0.5A, VCE = –10V | – | 80 | – | MHz |
| Turn-on time | ton | Ic = –3A, RL=17Ω, Ib1=Ib2=–0.15A, VCC=–50V | – | 0.3 | – | µs |
| Storage time | tstg | Same as above | – | 1.5 | – | µs |
| Fall time | tf | Same as above | – | 0.3 | – | µs |
Pinout:
| Pin | Name | Description |
|---|---|---|
| 1 | Base | Control terminal |
| 2 | Collector | Internally connected to tab (isolated case) |
| 3 | Emitter | Ground/return terminal |
Applications:
- DC/DC converters.
- Actuator drivers.
- High‑speed switching regulators.
- Relay and solenoid drivers.
- Motor control circuits.
- General‑purpose power switching (PNP).
Packages Included:
- 1x 2SA1441 Silicon PNP Power Transistor -60V -5A TO-220F.
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