2SA1444 PNP Power Transistor TO-220F
The 2SA1444 PNP Power Transistor TO-220F is a robust silicon bipolar junction transistor (BJT) designed for high-current power switching and amplification applications. Manufactured by Inchange Semiconductor, this device features a PNP polarity and is housed in a TO-220F plastic power package, providing excellent thermal performance and easy mounting to heatsinks for enhanced power dissipation. The 2SA1444 offers a high DC current gain with low saturation voltage, making it well-suited for use as a driver transistor in power supplies, DC/DC converters, and actuator control circuits.
Features:
- PNP epitaxial silicon construction for high reliability.
- Low collector-emitter saturation voltage VCE(sat).
- High DC current gain hFE at high collector current.
- High-speed switching capability.
- Fully isolated TO-220F package
Specifications:
| Parameter | Value |
|---|---|
| Collector-Base Voltage VCBO | -100VDC |
| Collector-Emitter Voltage VCEO | -60VDC |
| Emitter-Base Voltage VEBO | -7VDC |
| Collector Current IC | -15ADC |
| Power Dissipation PC (Tc=25°C) | 30W |
| DC Current Gain hFE | 60 (min) @ IC=-3A, VCE=-2V |
| Collector-Emitter Saturation Voltage VCE(sat) | -0.5V (max) @ IC=-8A, IB=-0.8A |
| CurrentGain—Bandwidth Product | 80MHz |
| Operating Temperature | -55°C to +150°C |
| Package | TO-220F |
Pin Configuration:
Applications:
- High-speed switching regulators and converters.
- Audio power amplifier output stages.
- Motor drivers and solenoid control circuits.
- DC-DC converters and inverters.
- General-purpose power switching in industrial equipment.
Package Include:
1x 2S-A1444 PNP Power Transistor TO-220F.
