2SB857 PNP Transistor 50V 4A TO-220
The 2SB857 is a PNP silicon power transistor designed for low-frequency power amplifier and switching applications. With a −50V collector-emitter voltage and −4A collector current, it provides reliable performance in audio amplification, power control, and general-purpose analog circuits.
Housed in a TO-220 package, the device supports efficient heat dissipation and easy mounting to heatsinks. It is commonly used as a complementary pair with 2SD1133 / 2SD1134, making it suitable for push-pull amplifier designs and power stages.
Features
- PNP power transistor for amplification and switching.
- −50V collector-emitter voltage (VCEO).
- −4A continuous collector current capability.
- Low saturation voltage for efficient operation.
- Designed for low-frequency power amplifier applications.
- TO-220 package for good thermal performance.
- Complementary pair with 2SD1133 / 2SD1134.
Specifications
Absolute Maximum Ratings (Ta = 25°C)
| Item | Symbol | Ratings | Unit |
|---|---|---|---|
| Collector to base voltage | VCBO | -70 | V |
| Collector to emitter voltage | VCEO | -50 | V |
| Emitter to base voltage | VEBO | -5 | V |
| Collector current | IC | -4 | A |
| Collector peak current | IC(peak) | -8 | A |
| Collector power dissipation | PC*1 | 40 | W |
| Junction temperature | Tj | 150 | °C |
| Storage temperature | Tstg | -45 to +150 | °C |
Note: 1. Value at Tc = 25°C
Applications
- Audio power amplifiers (push-pull stages).
- Low-frequency power amplification.
- Switching regulators and control circuits.
- Motor drivers and relay control.
- General-purpose power electronics.
Documents
| Datasheet | 2SB857 |