Features:
- 2SC2625 is an NPN high-power silicon transistor, with a voltage resistance of 450v, a current of 10a, and a power of 80w.
- The main purpose is for power amplification and switching power supplies.
- High Collector-Emitter Breakdown Voltage.
- High speed switching.
- High reliability.
Pin Configurations:
Specifications:
Product Attribute | Attribute Value |
Datasheet | 2SC2625 |
Product Category | Bipolar Transistors – BJT |
Model | 2SC2625 |
Transistor Type | NPN |
Package/Case | TO-3PN |
Mounting Style | Through Hole |
Number of terminals | 3 |
Collector Current (Continuous) | 10A |
Base Current (Continuous) | 3A |
Collector-Base Voltage (VCBO) | 450V |
Collector-Emitter Voltage (VCEO) | 400V |
Collector-Emitter Saturation Voltage VCEO(sat.) | 400V |
Emitter- Base Voltage VEBO | 7V |
Collector Power Dissipation (PC) @ TC=25℃ | 80 W |
Junction Temperature (TJ) | +150 °C |
Storage Temperature Range (Tstg) | -55 °C to +150 °C |
Applications:
- Switching regulators.
- Ultrasonic generators.
- High frequency inverters.
- General purpose power amplifiers.
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