2SC3150 NPN Power Transistor 800V 3A TO-220

High-speed NPN power transistor (800V, 3A, 50W) in a TO-220 package. Perfect for switching regulators, inverters, and converters.

20.00 EGP

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Availability: In Stock
SKU:3496300096152
2SC3150 NPN Power Transistor 800V 3A TO-220

The 2SC3150 is a high-voltage, high-speed NPN silicon power switching transistor housed in a standard TO-220 package. It is specifically engineered for robust performance in demanding high-voltage power applications, making it an excellent choice for switching regulators, inverters, and converters.

Features
  • High Voltage Capacity
  • Low Saturation Voltage
  • Fast Switching Speeds
Specifications
Maximum Ratings (TC = 25°C unless otherwise noted)
Specification / Characteristic Symbol Value / Rating Unit
Collector-Emitter Voltage VCEO 800 V
Collector-Base Voltage VCBO 900 V
Emitter-Base Voltage VEBO 7.0 V
Collector Current – Continuous IC 3.0 A
Collector Current – Peak ICM 10 A
Base Current IB 1.5 A
Total Power Dissipation @ TC = 25°C PD 50 W
Derate Above 25°C 0.4 W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -55 to +150 °C
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal Resistance Junction to Case RθJC 2.5 °C/W
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Collector-Emitter Sustaining Voltage (IC = 3.0 A, IB = 1.0 A, L = 500 μH) VCEO(SUS) 800 V
Collector-Emitter Breakdown Voltage (IC = 5.0 mA, IB = 0) V(BR)CEO 800 V
Collector-Base Breakdown Voltage (IC = 1.0 mA, IE = 0) V(BR)CBO 900 V
Emitter-Base Breakdown Voltage (IE = 1.0 mA, IC = 0) V(BR)EBO 7.0 V
Collector Cutoff Current (VCB = 800 V, IE = 0) ICBO 10 μA
Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO 10 μA
DC Current Gain (IC = 1.0 A, VCE = 5.0 V) hFE 10 40
Collector-Emitter Saturation Voltage (IC = 1.5 A, IB = 300 mA) VCE(sat) 2.0 V
Base-Emitter Saturation Voltage (IC = 1.5 A, IB = 300 mA) VBE(sat) 1.5 V
Current-Gain-Bandwidth Product (IC = 0.2 A, VCE = 10 V, f = 1.0 MHz) fT 7.0 MHz
Switching Characteristics (VCC = 400 V, IC = 2.0 A, IB1 = 0.4 A, IB2 = -0.8 A, RL = 200 Ω)
Parameter Symbol Max Unit
On Time ton 1.0 μs
Storage Time ts 3.0 μs
Fall Time tf 0.7 μs

Applications
  • Switching Regulators
  • Inverters
  • Converters
Package Content
  • 1 x 2SC3150 NPN Power Transistor 800V 3A TO-220
DataSheet
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