The 2SC3150 is a high-voltage, high-speed NPN silicon power switching transistor housed in a standard TO-220 package. It is specifically engineered for robust performance in demanding high-voltage power applications, making it an excellent choice for switching regulators, inverters, and converters.
Features
- High Voltage Capacity
- Low Saturation Voltage
- Fast Switching Speeds
Specifications
Maximum Ratings (TC = 25°C unless otherwise noted)
| Specification / Characteristic |
Symbol |
Value / Rating |
Unit |
| Collector-Emitter Voltage |
VCEO |
800 |
V |
| Collector-Base Voltage |
VCBO |
900 |
V |
| Emitter-Base Voltage |
VEBO |
7.0 |
V |
| Collector Current – Continuous |
IC |
3.0 |
A |
| Collector Current – Peak |
ICM |
10 |
A |
| Base Current |
IB |
1.5 |
A |
| Total Power Dissipation @ TC = 25°C |
PD |
50 |
W |
| Derate Above 25°C |
– |
0.4 |
W/°C |
| Operating and Storage Junction Temperature Range |
TJ, TSTG |
-55 to +150 |
°C |
Thermal Characteristics
| Characteristic |
Symbol |
Max |
Unit |
| Thermal Resistance Junction to Case |
RθJC |
2.5 |
°C/W |
Electrical Characteristics (TC = 25°C unless otherwise noted)
| Characteristic |
Symbol |
Min |
Max |
Unit |
| Collector-Emitter Sustaining Voltage (IC = 3.0 A, IB = 1.0 A, L = 500 μH) |
VCEO(SUS) |
800 |
– |
V |
| Collector-Emitter Breakdown Voltage (IC = 5.0 mA, IB = 0) |
V(BR)CEO |
800 |
– |
V |
| Collector-Base Breakdown Voltage (IC = 1.0 mA, IE = 0) |
V(BR)CBO |
900 |
– |
V |
| Emitter-Base Breakdown Voltage (IE = 1.0 mA, IC = 0) |
V(BR)EBO |
7.0 |
– |
V |
| Collector Cutoff Current (VCB = 800 V, IE = 0) |
ICBO |
– |
10 |
μA |
| Emitter Cutoff Current (VEB = 5.0 V, IC = 0) |
IEBO |
– |
10 |
μA |
| DC Current Gain (IC = 1.0 A, VCE = 5.0 V) |
hFE |
10 |
40 |
– |
| Collector-Emitter Saturation Voltage (IC = 1.5 A, IB = 300 mA) |
VCE(sat) |
– |
2.0 |
V |
| Base-Emitter Saturation Voltage (IC = 1.5 A, IB = 300 mA) |
VBE(sat) |
– |
1.5 |
V |
| Current-Gain-Bandwidth Product (IC = 0.2 A, VCE = 10 V, f = 1.0 MHz) |
fT |
7.0 |
– |
MHz |
Switching Characteristics (VCC = 400 V, IC = 2.0 A, IB1 = 0.4 A, IB2 = -0.8 A, RL = 200 Ω)
| Parameter |
Symbol |
Max |
Unit |
| On Time |
ton |
1.0 |
μs |
| Storage Time |
ts |
3.0 |
μs |
| Fall Time |
tf |
0.7 |
μs |
Applications
- Switching Regulators
- Inverters
- Converters
Package Content
- 1 x 2SC3150 NPN Power Transistor 800V 3A TO-220
DataSheet
