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2SC4793 NPN BJT Transistor 230V 1A TO-220F

The 2SC4793 is a high-voltage NPN bipolar junction transistor commonly used in power amplifier output stages, driver amplifier circuits, and other high-voltage linear amplification applications.

20.00 EGP

In stockSKU 3496300096909
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2SC4793 NPN BJT Transistor 230V 1A TO-220F

The 2SC4793 is a silicon NPN epitaxial transistor designed by Toshiba for power amplifier and driver-stage amplifier applications. It features a 230V collector-emitter voltage rating, a 1A maximum collector current, and a typical transition frequency of 100MHz, making it suitable for demanding amplifier circuits that require high voltage capability and good high-frequency performance. It is also specified as complementary to the 2SA1837 transistor.

The transistor provides a DC current gain range of 100 to 320 under the specified test conditions and a maximum collector power dissipation of 20W at a case temperature of 25°C. It is intended primarily for power amplification and driver-stage applications and is available in a leaded power package suitable for through-hole mounting.

Features:
  • NPN silicon epitaxial transistor.
  • High-voltage transistor design.
  • Suitable for power amplifier circuits.
  • Suitable for driver-stage amplifier circuits.
  • High transition frequency.
  • Complementary transistor to 2SA1837.
  • Through-hole power transistor construction.
  • Suitable for linear amplification applications.
  • Good high-voltage capability.
Specifications:
Product Attribute Attribute Value
Datasheet 2SC4793
Product Category Bipolar Transistors – BJT
Technolog Si
Model 2SC4793
Configuration Single
Transistor Polarity NPN
Package/Case TO-220F
Mounting Style Through Hole
Number of terminals 3
Current – Collector (Ic) (Max) 1 A
Voltage – Collector Emitter Breakdown (Max) 230 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Current – Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V
Power – Max 2 W
Operating Temperature 150°C (TJ)
Storage Temperature Range (Tstg) -55 °C  to  +150 °C
Pinout:
Applications:
  • Audio amplifier stages.
  • High power audio amplifiers.
  • Motor Driver Applications.
  • Radio and RF  Applications.
  • Drive load of up to 1A.
Package Includes:
  • 2SC4793 NPN BJT Transistor 230V 1A TO-220F.
Datasheet:
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