Product specifications
Type | Transistor Silicon NPN |
Manufacturer | Toshiba |
Case | TO3PF |
Polarity | NPN |
Maximum Collector Power Dissipation (Pc) | 50 W |
Maximum Collector-Base Voltage |Vcb| | 1500 V |
Maximum Collector-Emitter Voltage |Vce| | 600 V |
Maximum Emitter-Base Voltage |Veb| | 5 V |
Maximum Collector Current |Ic max| | 3 A |
Max. Operating Junction Temperature (Tj) | 150 °C |
Collector Capacitance (Cc) | 165 pF |
Transition Frequency (ft): | 3 MHz |
Forward Current Transfer Ratio (hFE), MIN | 8 |
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