Product specifications
| Type | Transistor Silicon NPN |
| Manufacturer | Toshiba |
| Case | TO3PF |
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 50 W |
| Maximum Collector-Base Voltage |Vcb| | 1500 V |
| Maximum Collector-Emitter Voltage |Vce| | 600 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 3 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Collector Capacitance (Cc) | 165 pF |
| Transition Frequency (ft): | 3 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 8 |
