Specifications:
- Type Designator: 2SJ174
- Type of Transistor: MOSFET
- Type of Control Channel: P -Channel
- Maximum Power Dissipation (Pd): 75 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Drain Current |Id|: 30 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 20 nS
- Drain-Source Capacitance (Cd): 330 pF
- Drain-Source On-State Resistance (RDS(on)@Vgs,Id) : 0.060 Ohm @10V,30A
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