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2SK1117 N-Channel MOSFET Transistor 600V 6A TO-220

2SK1117 N-channel power MOSFET, 600V 6A 100W, low RDS(on), TO-220. For switch mode power supplies and general purpose applications.

20.00 EGP

In stockSKU 3496300151196
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2SK1117 N-Channel MOSFET Transistor 600V 6A TO-220

The 2SK1117 is a high-voltage N-Channel MOSFET transistor designed for switching power supplies, switching regulators, DC-DC converters, and industrial power control applications. The transistor is manufactured in a TO-220 package, providing efficient thermal dissipation and reliable high-power operation for through-hole electronic circuits and power electronics projects.

Features:
  • High drain current capability of 6.0A at TC=25°C.
  • High voltage capability with 600V drain-source breakdown voltage.
  • Low static drain-source on-state resistance of 1.25Ω maximum.
  • 100% avalanche tested for enhanced ruggedness.
  • Minimum lot-to-lot variations for robust device performance.
  • Reliable operation in switch mode power supplies.
  • Wide operating temperature range from -65°C to +150°C.
  • TO-220 package for effective thermal management.
Specifications:
Parameter Value
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDSS) 600V
Gate-Source Voltage (VGSS) ±20V
Continuous Drain Current (ID) 6.0A
Pulsed Drain Current (IDM) 24A
Total Power Dissipation (PD) 100W
Thermal Resistance (Rth j-c) 1.25°C/W
Drain-Source On-State Resistance (RDS(on)) 1.25Ω (Max.)
Gate Threshold Voltage (VGS(th)) 1.5V (Min.) / 3.5V (Max.)
Drain-Source Breakdown Voltage (V(BR)DSS) 600V (Min.)
Gate-Body Leakage Current (IGSS) ±100nA (Max.)
Zero Gate Voltage Drain Current (IDSS) 300μA (Max.)
Forward On-Voltage (VSD) 2.0V
Rise Time (tr) 25ns
Output Capacitance (Coss) 250pF
Max. Operating Junction Temperature (TJ) 150°C
Storage Temperature Range -65°C to +150°C
Package Type TO-220
Mounting Style Through-Hole
Pin Configuration:

Applications
  • Switch mode power supplies and SMPS designs.
  • DC-DC converter circuits.
  • General purpose power switching applications.
  • High speed power switching.
  • Uninterruptible power supply systems.
  • Active clamped forward converter topologies.
  • Power management and regulation circuits.
Package Contents

1x 2SK1117 N-Channel MOSFET Power Transistor.

Datasheet

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