2SK1117 N-Channel MOSFET Transistor 600V 6A TO-220
2SK1117 N-channel power MOSFET, 600V 6A 100W, low RDS(on), TO-220. For switch mode power supplies and general purpose applications.
20.00 EGP
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The 2SK1117 is a high-voltage N-Channel MOSFET transistor designed for switching power supplies, switching regulators, DC-DC converters, and industrial power control applications. The transistor is manufactured in a TO-220 package, providing efficient thermal dissipation and reliable high-power operation for through-hole electronic circuits and power electronics projects.
Features:
- High drain current capability of 6.0A at TC=25°C.
- High voltage capability with 600V drain-source breakdown voltage.
- Low static drain-source on-state resistance of 1.25Ω maximum.
- 100% avalanche tested for enhanced ruggedness.
- Minimum lot-to-lot variations for robust device performance.
- Reliable operation in switch mode power supplies.
- Wide operating temperature range from -65°C to +150°C.
- TO-220 package for effective thermal management.
Specifications:
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDSS) | 600V |
| Gate-Source Voltage (VGSS) | ±20V |
| Continuous Drain Current (ID) | 6.0A |
| Pulsed Drain Current (IDM) | 24A |
| Total Power Dissipation (PD) | 100W |
| Thermal Resistance (Rth j-c) | 1.25°C/W |
| Drain-Source On-State Resistance (RDS(on)) | 1.25Ω (Max.) |
| Gate Threshold Voltage (VGS(th)) | 1.5V (Min.) / 3.5V (Max.) |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 600V (Min.) |
| Gate-Body Leakage Current (IGSS) | ±100nA (Max.) |
| Zero Gate Voltage Drain Current (IDSS) | 300μA (Max.) |
| Forward On-Voltage (VSD) | 2.0V |
| Rise Time (tr) | 25ns |
| Output Capacitance (Coss) | 250pF |
| Max. Operating Junction Temperature (TJ) | 150°C |
| Storage Temperature Range | -65°C to +150°C |
| Package Type | TO-220 |
| Mounting Style | Through-Hole |
Pin Configuration:
Applications
- Switch mode power supplies and SMPS designs.
- DC-DC converter circuits.
- General purpose power switching applications.
- High speed power switching.
- Uninterruptible power supply systems.
- Active clamped forward converter topologies.
- Power management and regulation circuits.
Package Contents
1x 2SK1117 N-Channel MOSFET Power Transistor.