2SK1507 N-Channel MOSFET Transistor 600V 9A TO-220
The 2SK1507 is an N-channel silicon power MOSFET designed specifically for high-speed power switching applications including switching regulators, DC-DC converters, and general purpose power amplifiers. This robust power MOSFET delivers reliable performance in demanding power electronics environments, featuring a drain-source voltage rating of 600V and a continuous drain current capability of 9A.
The 2SK1507 is engineered with advanced MOS technology to ensure low on-state resistance and excellent thermal stability, making it an ideal choice for engineers and hobbyists working on power conversion and switching projects. Its TO-220 through-hole package provides straightforward mounting and effective heat dissipation for medium-power applications. The device is avalanche-proof and features a ±30V gate-source voltage guarantee for enhanced reliability.
Features
- High speed switching capability.
- Low drain-source on-state resistance for minimal conduction losses.
- No secondary breakdown mechanism ensures robust operation.
- Low driving power requirement.
- High voltage capability with 600V drain-source breakdown voltage.
- Gate-source voltage guaranteed to ±30V.
- Avalanche-proof design for enhanced ruggedness.
- Wide operating temperature range from -55°C to +150°C.
Specifications:
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDSS) | 600V |
| Gate-Source Voltage (VGSS) | ±30V |
| Continuous Drain Current (ID) | 9A |
| Pulsed Drain Current (ID(pulse)) | 27A |
| Continuous Reverse Drain Current (IDR) | 9A |
| Maximum Power Dissipation (PD) | 50W |
| Drain-Source On-State Resistance (RDS(on)) | 0.85Ω (Typ.) / 1.0Ω (Max.) |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 600V (Min.) |
| Gate Threshold Voltage (VGS(th)) | 2.5V (Min.) / 3.5V (Typ.) / 5.0V (Max.) |
| Zero Gate Voltage Drain Current (IDSS) | 10μA (Typ.) / 500μA (Max.) |
| Gate-Source Leakage Current (IGSS) | 10nA (Typ.) / 100nA (Max.) |
| Forward Transconductance (gfs) | 4.0S (Min.) / 6.0S (Typ.) |
| Input Capacitance (Ciss) | 1200pF (Typ.) / 1800pF (Max.) |
| Output Capacitance (Coss) | 150pF (Typ.) / 230pF (Max.) |
| Reverse Transfer Capacitance (Crss) | 60pF (Typ.) / 90pF (Max.) |
| Turn-On Delay Time (td(on)) | 30ns (Typ.) / 45ns (Max.) |
| Rise Time (tr) | 80ns (Typ.) / 120ns (Max.) |
| Turn-Off Delay Time (td(off)) | 160ns (Typ.) / 240ns (Max.) |
| Fall Time (tf) | 80ns (Typ.) / 120ns (Max.) |
| Diode Forward On-Voltage (VSD) | 1.1V (Typ.) / 1.5V (Max.) |
| Reverse Recovery Time (trr) | 500ns (Typ.) |
| Thermal Resistance (Rth(ch-c)) | 2.5°C/W |
| Storage Temperature Range | -55°C to +150°C |
| Channel Temperature (Tch) | 150°C (Max.) |
| Package Type | TO-220 |
| Mounting Style | Through-Hole |
Applications:
- Switching regulator designs.
- Low power supplies (LPS).
- DC-DC converter circuits.
- General purpose power amplifier applications.
- High speed power switching.
- Power management systems.
Package Include:
1x 2SK1507 N-Channel MOSFET Power Transistor.