2SK2025 N-Channel MOSFET Transistor 600V 4A TO-220AB
The 2SK2025 is a high-performance N-channel MOSFET. Boasting a 600V drain-source voltage rating and a 4A continuous drain current capability, this transistor features a remarkably low maximum on-state resistance of 2.4Ω. It is housed in a standard, industry-recognized TO-220AB package outline , providing an optimal balance between power dissipation (up to 60W) and ease of board integration.
Features
- High Speed Switching
- Low On-Resistance (Max 2.4Ω)
- No Secondary Breakdown
- Low Driving Power
- High Voltage (600V)
- Enhanced Gate Safety (VGS = ±30V Guarantee)
- Avalanche Proof
Specifications
Absolute Maximum Ratings (TC = 25°C unless specified)
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 600 | V |
| Drain-Gate Voltage (RGS = 20kΩ) | VDGR | 600 | V |
| Continuous Drain Current | ID | 4 | A |
| Pulsed Drain Current | ID(puls) | 16 | A |
| Gate-Source Voltage | VGS | ±30 | V |
| Max. Power Dissipation | PD | 60 | W |
| Operating Channel Temperature | Tch | 150 | °C |
| Storage Temperature Range | Tstg | -55 to +150 | °C |
Electrical Characteristics (TC = 25°C unless specified)
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=1mA | 600 | V | ||
| Gate Threshold Voltage | VGS(th) | ID=1mA, VDS=VGS | 2.5 | 3.0 | 3.5 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V, VGS=0V, Tch=25°C VDS=600V, VGS=0V, Tch=125°C |
10 0.2 |
500 1.0 |
μA mA |
|
| Gate-Source Leakage Current | IGSS | VGS=±30V, VDS=0V | 10 | 100 | nA | |
| Drain-Source On-Resistance | RDS(on) | ID=2A, VGS=10V | 2.0 | 2.4 | Ω | |
| Forward Transconductance | gfs | ID=2A, VDS=25V | 2 | 4 | S | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 1000 | 1500 | pF | |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 85 | 130 | pF | |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 20 | 30 | pF | |
| Turn-On Delay Time | td(on) | VCC=300V, ID=4A, VGS=10V, RGS=10Ω | 20 | 30 | ns | |
| Rise Time | tr | VCC=300V, ID=4A, VGS=10V, RGS=10Ω | 15 | 25 | ns | |
| Turn-Off Delay Time | td(off) | VCC=300V, ID=4A, VGS=10V, RGS=10Ω | 45 | 70 | ns | |
| Fall Time | tf | VCC=300V, ID=4A, VGS=10V, RGS=10Ω | 15 | 25 | ns | |
| Avalanche Capability | IAV | L=100μH, Tch=25°C | 4 | A |
Reverse Diode Characteristics
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Continuous Reverse Drain Current | IDR | 4 | A | |||
| Pulsed Reverse Drain Current | IDRM | 16 | A | |||
| Diode Forward On-Voltage | VSD | IF = 2 × IDR, VGS=0V, Tch=25°C | 1.1 | 1.65 | V | |
| Reverse Recovery Time | trr | IF = ID, VGS=0V, -dIF/dt = 100A/μs, Tch=25°C | 400 | ns | ||
| Reverse Recovery Charge | Qrr | IF = ID, VGS=0V, -dIF/dt = 100A/μs, Tch=25°C | 2 | μC |
Thermal Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Thermal Resistance (Channel to Air) | Rth(ch-a) | 75 | °C/W | ||
| Thermal Resistance (Channel to Case) | Rth(ch-c) | 2.08 | °C/W |
Applications
- Switching Regulators
- Uninterruptible Power Supplies (UPS)
- DC-DC Converters
- General Purpose Power Amplifiers
Package Content
- 1 x 2SK2025 N-Channel MOSFET Transistor 600V 4A TO-220AB
