2SK2161 N-Channel MOSFET Transistor 200V 9A TO-220ML
The 2SK2161 is an N-channel MOSFET, housed in a specialized TO-220ML package. This high-performance transistor features low ON resistance and low-voltage drive capabilities, making it an excellent choice for modern electronic circuitry requiring high efficiency. Designed specifically to handle high-speed demands, it ensures minimal power loss and swift transition states.
Features
- Ultrahigh-Speed Switching
- Low ON Resistance
- Low-Voltage Drive
Specifications
Absolute Maximum Ratings at Ta = 25°C
| Parameter | Symbol | Conditions | Ratings | Unit |
|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | — | 200 | V |
| Gate-to-Source Voltage | VGSS | — | +20 | V |
| Drain Current (DC) | ID | — | 9 | A |
| Drain Current (Pulse) | IDP | PW ≤ 10μs, duty cycle ≤ 1% | 36 | A |
| Allowable Power Dissipation | PD | — | 2.0 | W |
| Allowable Power Dissipation | PD | Tc = 25°C | 25 | W |
| Channel Temperature | Tch | — | 150 | °C |
| Storage Temperature | Tstg | — | -55 to +150 | °C |
Electrical Characteristics at Ta = 25°C
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | ID = 1mA, VGS = 0 | 200 | — | — | V |
| Gate-to-Source Breakdown Voltage | V(BR)GSS | IG = ±100μA, VDS = 0 | +20 | — | — | V |
| Zero-Gate Voltage Drain Current | IDSS | VDS = 200V, VGS = 0 | — | — | 100 | μA |
| Gate-to-Source Leakage Current | IGSS | VGS = ±16V, VDS = 0 | — | — | ±10 | μA |
| Cutoff Voltage | VGS(off) | VDS = 10V, ID = 1mA | 1.5 | — | 2.5 | V |
| Forward Transfer Admittance | |yfs| | VDS = 10V, ID = 4.5A | 3.5 | 6.0 | — | S |
| Static Drain-to-Source ON-State Resistance | RDS(on) | ID = 4.5A, VGS = 10V | — | 250 | 350 | mΩ |
| Input Capacitance | Ciss | VDS = 20V, f = 1MHz | — | 700 | — | pF |
| Output Capacitance | Coss | VDS = 20V, f = 1MHz | — | 140 | — | pF |
| Reverse Transfer Capacitance | Crss | VDS = 20V, f = 1MHz | — | 55 | — | pF |
| Turn-ON Delay Time | td(on) | See specified Test Circuit | — | 14 | — | ns |
| Rise Time | tr | See specified Test Circuit | — | 19 | — | ns |
| Turn-OFF Delay Time | td(off) | See specified Test Circuit | — | 200 | — | ns |
| Fall Time | tf | See specified Test Circuit | — | 80 | — | ns |
| Diode Forward Voltage | VSD | IS = 9A, VGS = 0 | — | 1.0 | 1.5 | V |
Applications
- Ultra high-Speed Switching Applications: Purpose-built for electronic setups demanding rapid switching rates and high reliability.
Package Content
- 1 x 2SK2161 N-Channel MOSFET Transistor 200V 9A TO-220ML