2SK2248 N-Channel SMD MOSFET Transistor 30V 70A TO-252
The 2SK2248 is a high-performance N-Channel MOSFET. Enclosed in a compact TO-252 surface-mount package, it delivers excellent efficiency with extremely low on-resistance and reliable thermal management. It features an advanced N-Channel configuration optimized for demanding power-delivery circuitry.
Features
- Trench Power MOSFET Technology
- Low On-Resistance
- Rigorous Testing
- Environmental Standards
Specifications
Key Product Summary
| Parameter | Symbol | Value / Condition | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V |
| Drain-Source On-State Resistance | RDS(on) | 0.007 @ VGS = 10 V 0.009 @ VGS = 4.5 V |
Ω |
| Continuous Drain Current | ID | 70 @ VGS = 10 V 60 @ VGS = 4.5 V |
A |
| Total Gate Charge (Typical) | Qg | 25 | nC |
Absolute Maximum Ratings (TA = 25 °C, unless otherwise noted)
| Parameter | Symbol | Limit | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V |
| Gate-Source Voltage | VGS | ±20 | |
| Continuous Drain Current (TJ = 175 °C) | ID | 70 (TC = 25 °C) 50 (TC = 70 °C) |
A |
| Continuous Source-Drain Diode Current | IS | 50a,e (TC = 25 °C) 3.13b,c (TA = 25 °C) |
|
| Pulsed Drain Current | IDM | 200 | |
| Avalanche Current Pulse | IAS | 39 | |
| Single Pulse Avalanche Energy (L = 0.1 mH) | EAS | 94.8 | mJ |
| Maximum Power Dissipation | PD | 75 (TC = 25 °C) 3.25b,c (TA = 25 °C) 2.33b,c (TA = 70 °C) |
W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 175 | °C |
Thermal Resistance Ratings
| Parameter | Symbol | Typical | Maximum | Unit |
|---|---|---|---|---|
| Maximum Junction-to-Ambientb,c,d (t ≤ 10 sec) | RthJA | 32 | 40 | °C/W |
| Maximum Junction-to-Case (Steady State) | RthJC | 0.5 | 0.6 |
Electrical Specifications (TJ = 25 °C, unless otherwise noted)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 μA | 30 | V | ||
| VDS Temperature Coefficient | ΔVDS/TJ | ID = 250 μA | 35 | mV/°C | ||
| Temperature Coefficient VGS(th) | ΔVGS(th)/TJ | -7.5 | ||||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 μA | 1.5 | 2.0 | 2.5 | V |
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = ±20 V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 30 V, VGS = 0 V | 1 | μA | ||
| On-State Drain Currenta | ID(on) | VDS ≥ 5 V, VGS = 10 V | 90 | A | ||
| Drain-Source On-State Resistancea | RDS(on) | VGS = 10 V, ID = 21.8 A VGS = 4.5 V, ID = 18 A |
0.007 0.009 |
Ω | ||
| Forward Transconductancea | gfs | VDS = 15 V, ID = 21.8 A | 160 | S | ||
| Dynamic Characteristicsb | ||||||
| Input Capacitance | Ciss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2201 | pF | ||
| Output Capacitance | Coss | 525 | ||||
| Reverse Transfer Capacitance | Crss | 370 | ||||
| Total Gate Charge | Qg | VDS = 15 V, VGS = 10 V, ID = 21.8 A | 35 | 45 | nC | |
| Total Gate Charge | Qg | VDS = 15 V, VGS = 4.5 V, ID = 21.8 A | 25 | 35 | ||
| Gate-Source Charge | Qgs | 15 | ||||
| Gate-Drain Charge | Qgd | 20 | ||||
| Gate Resistance | Rg | f = 1 MHz | 1.4 | 2.1 | Ω | |
| Switching Characteristicsb (VGEN = 10 V) | ||||||
| Turn-On Delay Time | td(on) | VDD = 15 V, RL = 0.625 Ω ID ≅ 24 A, Rg = 1 Ω |
18 | 27 | ns | |
| Rise Time | tr | 11 | 17 | |||
| Turn-Off Delay Time | td(off) | 70 | 105 | |||
| Fall Time | tf | 10 | 15 | |||
| Switching Characteristicsb (VGEN = 4.5 V) | ||||||
| Turn-On Delay Time | td(on) | VDD = 15 V, RL = 0.67 Ω ID ≅ 22.5 A, Rg = 1 Ω |
55 | 83 | ||
| Rise Time | tr | 180 | 270 | |||
| Turn-Off Delay Time | td(off) | 55 | 83 | |||
| Fall Time | tf | 12 | 18 | |||
| Drain-Source Body Diode Characteristics | ||||||
| Continuous Source-Drain Diode Current | IS | TC = 25 °C | 120 | A | ||
| Pulse Diode Forward Currenta | ISM | 120 | ||||
| Body Diode Voltage | VSD | IS = 22 A, VGS = 0 V | 0.8 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF = 20 A, di/dt = 100 A/μs, TJ = 25 °C | 52 | 78 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | 70.2 | 105 | nC | ||
| Reverse Recovery Fall Time | ta | 27 | ns | |||
| Reverse Recovery Rise Time | tb | 25 | ||||
Applications
- OR-ing functionality
- Server power systems
- DC/DC converters
Package Content
- 1 x 2SK2248 N-Channel SMD MOSFET Transistor 30V 70A TO-252