2SK2324 N-Channel MOSFET 600V 2A TO-220
2SK2324 N-channel power MOSFET in TO-220E, 600V, with low on-resistance and avalanche energy capability for high-voltage switching applications.
11.00 EGP
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The 2SK2324 is a silicon N-channel power F-MOS FET designed for high-voltage switching applications that require fast switching, low on-resistance, and rugged avalanche performance. It is rated for 600V drain-source breakdown voltage, 2A continuous drain current, and 40W allowable power dissipation at case temperature, making it suitable for motor drive, solenoid drive, control equipment, non-contact relay, and switching-mode regulator circuits. The device is housed in a TO-220E package for through-hole mounting and heatsinking.
Features
- Avalanche energy capability is guaranteed.
- High-speed switching for power control circuits.
- Low on-resistance for improved efficiency.
- No secondary breakdown for rugged operation.
- TO-220E package supports heatsink mounting.
Specifications
| Absolute Maximum Ratings (Tc = 25°C) | ||||
|---|---|---|---|---|
| Parameter | Symbol | Rating | Unit | |
| Drain-Source breakdown voltage | VDSS | 600 | V | |
| Gate-Source voltage | VGSS | ±30 | V | |
| Drain current | DC | ID | ±2 | A |
| Pulse | IDP | ±4 | A | |
| Avalanche energy capability | EAS * | 10 | mJ | |
| Allowable power dissipation | Tc = 25°C | PD | 2 | W |
| Ta = 25°C | 40 | |||
| Channel temperature | Tch | 150 | °C | |
| Storage temperature | Tstg | -55 to +150 | °C | |
| * L = 5mH, IL = 2A, 1 pulse | ||||
Applications
- Non-contact relay circuits.
- Solenoid drive circuits.
- Motor drive systems.
- Control equipment.
- Switching-mode regulators.
Package Contents
- 1x 2SK2324 N-Channel MOSFET TO-220.
Documents
| Datasheet | 2SK2324 |
| Weight | 2 g |
|---|---|
| Dimensions | 20 × 10 × 5 mm |