The 2SK2324 is a silicon N-channel power F-MOS FET designed for high-voltage switching applications that require fast switching, low on-resistance, and rugged avalanche performance. It is rated for 600V drain-source breakdown voltage, 2A continuous drain current, and 40W allowable power dissipation at case temperature, making it suitable for motor drive, solenoid drive, control equipment, non-contact relay, and switching-mode regulator circuits. The device is housed in a TO-220E package for through-hole mounting and heatsinking.
Features
- Avalanche energy capability is guaranteed.
- High-speed switching for power control circuits.
- Low on-resistance for improved efficiency.
- No secondary breakdown for rugged operation.
- TO-220E package supports heatsink mounting.
Specifications
| Absolute Maximum Ratings (Tc = 25°C) |
| Parameter |
Symbol |
Rating |
Unit |
| Drain-Source breakdown voltage |
VDSS |
600 |
V |
| Gate-Source voltage |
VGSS |
±30 |
V |
| Drain current |
DC |
ID |
±2 |
A |
| Pulse |
IDP |
±4 |
A |
| Avalanche energy capability |
EAS * |
10 |
mJ |
| Allowable power dissipation |
Tc = 25°C |
PD |
2 |
W |
| Ta = 25°C |
40 |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55 to +150 |
°C |
| * L = 5mH, IL = 2A, 1 pulse |
Applications
- Non-contact relay circuits.
- Solenoid drive circuits.
- Motor drive systems.
- Control equipment.
- Switching-mode regulators.
Package Contents
- 1x 2SK2324 N-Channel MOSFET TO-220.
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