2SK2462 N-Channel MOSFET Transistor 100V 15A TO-220F
The 2SK2462 is an N-Channel MOS Field Effect Transistor housed in an isolated TO-220F package. It is engineered specifically for high-current switching applications and industrial use.
Features
- Low On-State Resistance
- Low Input Capacitance
- Built-in Gate-Source Protection Diodes
- High Avalanche Capability
Specifications
Absolute Maximum Ratings (TA = 25 °C)
| Parameter | Symbol | Rating / Condition | Unit |
|---|---|---|---|
| Drain to Source Voltage | VDSS | 100 | V |
| Gate to Source Voltage | VGSS | ±20 | V |
| Drain Current (DC) | ID(DC) | ±15 | A |
| Drain Current (Pulse) | ID(pulse) | ±60 (PW ≤ 10 μs, Duty Cycle ≤ 1%) |
A |
| Total Power Dissipation (TC = 25 °C) | PT1 | 30 | W |
| Total Power Dissipation (TA = 25 °C) | PT2 | 2.0 | W |
| Channel Temperature | Tch | 150 | °C |
| Storage Temperature | Tstg | -55 to +150 | °C |
| Single Avalanche Current | IAs / IAS | 15 (Starting Tch = 25 °C, RG = 25 Ω) |
A |
| Single Avalanche Energy | EAs / EAS | 22.5 (VGS = 20 V → 0) |
mJ |
Electrical Characteristics (TA = 25 °C)
| Characteristic | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Drain to Source On-Resistance | RDS(on)1 | 0.10 | 0.14 | Ω | VGS = 10 V, ID = 8.0 A | |
| Drain to Source On-Resistance | RDS(on)2 | 0.12 | 0.17 | Ω | VGS = 4 V, ID = 8.0 A | |
| Gate to Source Cutoff Voltage | VGS(off) | 1.0 | 1.6 | 2.0 | V | VDS = 10 V, ID = 1 mA |
| Forward Transfer Admittance | |yfs| | 7.0 | 14 | S | VDS = 10 V, ID = 8.0 A | |
| Drain Leakage Current | IDSS | 10 | μA | VDS = 100 V, VGS = 0 | ||
| Gate to Source Leakage Current | IGSS | ±10 | μA | VGS = ±20 V, VDS = 0 | ||
| Input Capacitance | Ciss | 790 | pF | VDS = 10 V VGS = 0 f = 1 MHz |
||
| Output Capacitance | Coss | 280 | pF | |||
| Reverse Transfer Capacitance | Crss | 88 | pF | |||
| Turn-On Delay Time | td(on) | 16 | ns | ID = 8.0 A VGS(on) = 10 V VDD} = 50 V RG = 10 Ω |
||
| Rise Time | tr | 110 | ns | |||
| Turn-Off Delay Time | td(off) | 88 | ns | |||
| Fall Time | tf | 62 | ns | |||
| Total Gate Charge | QG | 33 | nC | ID = 15 A VDD = 80 V VGS} = 10 V |
||
| Gate to Source Charge | QGS | 5.4 | nC | |||
| Gate to Drain Charge | QGD | 25 | nC | |||
| Body Diode Forward Voltage | VF(S-D) | 1.1 | V | IF = 15 A, VGS = 0 | ||
| Reverse Recovery Time | trr | 160 | ns | IF = 15 A, VGS = 0 di/dt = 100 A/μs |
||
| Reverse Recovery Charge | Qrr | 670 | nC |
Applications
- Power Equipment
- Industrial Controls
- Automation & Computing
- Consumer & Communications
Package Content
- 1 x 2SK2462 N-Channel MOSFET Transistor 100V 15A TO-220F