2SK2717 N-Channel MOSFET Transistor 900V 5A TO-220FP

2SK2717 N-channel MOSFET, 900V 5A in TO-220FP package, designed for high-voltage switching and power applications.

15.00 EGP

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2SK2717 N-Channel MOSFET Transistor 900V 5A TO-220FP

The 2SK2717 is a high-voltage N-channel power MOSFET designed for demanding switching applications such as DC-DC converters, motor drives, and power supplies. With a 900V drain-source voltage rating and 5A continuous drain current, it is ideal for circuits requiring high voltage tolerance and reliable performance.

This device features low on-resistance (≈2.3–2.5Ω) and fast switching characteristics, ensuring efficient operation with reduced power loss. The TO-220FP (fully insulated package) provides excellent thermal performance while simplifying mounting without the need for additional insulation, making it suitable for compact and high-voltage designs.

Features
  • Low drain−source ON-resistance : RDS (ON) = 2.3 Ω (typ.)
  • High forward transfer admittance : |Yfs | = 4.4 S (typ.)
  • Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
  • Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Specifications
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain–source voltage VDSS 900 V
Drain–gate voltage (RGS = 20 kΩ) VDGR 900 V
Gate–source voltage VGSS ±30 V
Drain current ID 5 (DC) A
IDP 15 (Pulse)
Drain power dissipation (TC = 25°C) PD 45 W
Single pulse avalanche energy EAS 595 mJ
Avalanche current IAR 5 A
Repetitive avalanche energy EAR 4.5 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C

Applications
  • Switching power supplies (SMPS).
  • DC-DC converters and power regulators.
  • Motor drive and control circuits.
  • High-voltage switching applications.
  • Industrial and consumer power electronics.
Documents
Datasheet 2SK2717
Weight 5 g
Dimensions 20 × 10 × 5 mm
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