2SK3562 N-Channel MOSFET Transistor 600V 6A TO-220F
The 2SK3562 is a high-performance, silicon N-channel MOS field-effect transistor (π-MOSVI). Designed primarily for enhancement-mode operation, it excels in switching regulator applications. This electrostatic-sensitive device offers extremely low leakage current and high speed, housed in a lead (Pb)-free, high-reliability package.
Features
- Low On-Resistance
- High Forward Transfer Admittance
- Low Leakage Current
- Enhancement Mode
Specifications
Absolute Maximum Ratings (Ta = 25°C)
| Characteristic | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-source voltage | VDSS | 600 | V |
| Drain-gate voltage (RGS = 20 kΩ) | VDGR | 600 | V |
| Gate-source voltage | VGSS | ±30 | V |
| Drain current (DC) (Note 1) | ID | 6 | A |
| Drain current (Pulse, t = 1 ms) (Note 1) | IDP | 24 | A |
| Drain power dissipation (Tc = 25°C) | PD | 40 | W |
| Single pulse avalanche energy (Note 2) | EAS | 345 | mJ |
| Avalanche current | IAR | 6 | A |
| Repetitive avalanche energy (Note 3) | EAR | 4 | mJ |
| Channel temperature | Tch | 150 | °C |
| Storage temperature range | Tstg | -55 to 150 | °C |
Electrical Characteristics (Ta = 25°C)
| Characteristic | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | VGS = ±25 V, VDS = 0 V | — | — | ±10 | μA |
| Gate-source breakdown voltage | V(BR)GSS | IG = ±10 μA, VDS = 0 V | ±30 | — | — | V |
| Drain cut-off current | IDSS | VDS = 600 V, VGS = 0 V | — | — | 100 | μA |
| Drain-source breakdown voltage | V(BR)DSS | ID = 10 mA, VGS = 0 V | 600 | — | — | V |
| Gate threshold voltage | Vth | VDS = 10 V, ID = 1 mA | 2.0 | — | 4.0 | V |
| Drain-source ON resistance | RDS(ON) | VGS = 10 V, ID = 3 A | — | 0.9 | 1.25 | Ω |
| Forward transfer admittance | |Yfs| | VDS = 10 V, ID = 3 A | 1.2 | 5.0 | — | S |
| Input capacitance | Ciss | VDS = 25 V, VGS = 0 V, f = 1 MHz |
— | 1050 | — | pF |
| Reverse transfer capacitance | Crss | — | 10 | — | pF | |
| Output capacitance | Coss | — | 110 | — | pF | |
| Rise time | tr | See test circuit in datasheet ID = 3 A, VGS = 0 to 10 V, RL = 66 Ω, VDD ≈ 200 V |
— | 20 | — | ns |
| Turn-on time | ton | — | 40 | — | ns | |
| Fall time | tf | — | 35 | — | ns | |
| Turn-off time | toff | — | 130 | — | ns | |
| Total gate charge | Qg | VDD ≈ 400 V, VGS = 10 V, ID = 6 A |
— | 28 | — | nC |
| Gate-source charge | Qgs | — | 16 | — | nC | |
| Gate-drain charge | Qgd | — | 12 | — | nC |
Source-Drain Ratings and Characteristics (Ta = 25°C)
| Characteristic | Symbol | Test Condition | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Continuous drain reverse current (Note 1) | IDR | — | — | 6 | A |
| Pulse drain reverse current (Note 1) | IDRP | — | — | 24 | A |
| Forward voltage (diode) | VDSF | IDR = 6 A, VGS = 0 V | — | -1.7 | V |
| Reverse recovery time | trr | IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/μs |
1000 | — | ns |
| Reverse recovery charge | Qrr | 7.0 | — | μC |
Thermal Characteristics
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Thermal resistance, channel to case | Rth(ch-c) | 3.125 | °C/W |
| Thermal resistance, channel to ambient | Rth(ch-a) | 62.5 | °C/W |
Applications
- Switching Regulators
- General Electronics Applications
Package Content
- 1 x 2SK3562 N-Channel MOSFET Transistor 600V 6A TO-220F
