2SK727 N-Channel MOSFET Transistor 900V 5A TO-3PFM
The 2SK727 is a high-voltage, N-channel silicon power MOSFET. Engineered for high-speed switching and exceptional stability, this power transistor handles high voltages up to 900V and a continuous drain current of 5A without risks of secondary breakdown. It boasts an avalanche-proof design, low driving power requirements, and excellent thermal performance, making it a reliable choice for robust industrial power systems.
Features
- High-Voltage Capability
- High-Speed Switching
- Low On-State Resistance
- No Secondary Breakdown
- Avalanche-Proof
- Low Driving Power
Specifications
Absolute Maximum Ratings (Tc = 25°C)
| Items | Symbols | Ratings | Units |
|---|---|---|---|
| Drain-source voltage | VDSS | 900 | V |
| Continuous drain current | ID | 5 | A |
| Pulsed drain current | ID(puls) | 20 | A |
| Continuous reverse drain current | IDR | 5 | A |
| Gate-source peak voltage | VGSS | ±20 | V |
| Max. power dissipation | PD | 125 | W |
| Operating channel temperature | Tch | 150 | °C |
| Storage temperature range | Tstg | -55 ~ +150 | °C |
Electrical Characteristics (Tc = 25°C)
| Items | Symbols | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | ID=1mA, VGS=0V | 900 | – | – | V |
| Gate threshold voltage | VGS(th) | ID=10mA, VDS=VGS | 2.1 | 3.0 | 4.0 | V |
| Zero gate voltage drain current | IDSS | VDS=900V, VGS=0V, Tch=25°C | – | 10 | 500 | μA |
| Gate-source leakage current | IGSS | VGS=±20V, VDS=0V | – | 10 | 100 | nA |
| Drain-source on-state resistance | RDS(on) | ID=2.5A, VGS=10V | – | 2.0 | 2.5 | Ω |
| Forward transconductance | gfs | ID=2.5A, VDS=25V | 3.0 | 6.0 | – | S |
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | – | 1500 | 2400 | pF |
| Output capacitance | Coss | – | 150 | 240 | pF | |
| Reverse transfer capacitance | Crss | – | 50 | 80 | pF | |
| Turn-on time (ton = td(on) + tr) | ton | VCC=30V, ID=2.4A, RG=50Ω, VGS=10V | – | 110 | 170 | ns |
| Turn-off time (toff = td(off) + tf) | toff | – | 300 | 450 | ns | |
| Diode forward on-voltage | VSD | IF=2 × IDR, VGS=0V, Tch=25°C | – | 1.0 | 1.5 | V |
| Reverse recovery time | trr | IF=IDR, di/dt=100A/μs, Tch=25°C | – | 900 | – | ns |
Thermal Characteristics
| Items | Symbols | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Thermal Resistance | Rth(ch-a) | Channel to air | – | – | 35 | °C/W |
| Thermal Resistance | Rth(ch-c) | Channel to case | – | – | 1.0 | °C/W |
Applications
- Switching Regulators
- Uninterruptible Power Supplies (UPS)
- DC-DC Converters
- General-Purpose Power Amplifiers
Package Content
- 1 x 2SK727 N-Channel MOSFET Transistor 900V 5A TO-3PFM