2SK799 N-Channel MOSFET Transistor 450V 12A TO-3P
2SK799 N-channel power MOSFET, 450V 12A 120W, low R<sub>, TO-3P package. Ideal for switching power supplies and DC-DC converters.
35.00 EGP
Buy Now2SK799 N-Channel MOSFET Transistor 450V 12A TO-3P
The 2SK799 is an N-channel MOS field effect power transistor manufactured by NEC, designed specifically for high-efficiency switching power supplies, DC-DC converters, actuator controls, and pulse circuit applications. This robust power MOSFET delivers reliable performance in demanding power electronics environments, featuring a high drain-source voltage rating of 450V and a continuous drain current capability of 12A.
The 2SK799 is engineered with advanced MOS technology to ensure low on-state resistance and excellent thermal stability, making it an ideal choice for engineers and hobbyists working on power conversion and motor control projects. Its TO-3P through-hole package provides straightforward mounting and effective heat dissipation for medium to high-power applications.
Features:
- Suitable for switching power supplies, actuator controls, and pulse circuits.
- Low drain-source on-state resistance for minimal conduction losses.
- No secondary breakdown mechanism ensures robust operation.
- High voltage capability with 450V drain-source breakdown voltage.
- Fast switching characteristics with low delay and rise times.
- High forward transfer admittance for efficient gate drive control.
- Wide operating temperature range from -55°C to +150°C.
- Reliable TO-3P package for effective thermal management.
Specifications:
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDSS) | 450V |
| Gate-Source Voltage (VGSS) | ±20V |
| Continuous Drain Current (ID(DC)) | ±12A |
| Pulsed Drain Current (ID(pulse)) | ±40A |
| Total Power Dissipation (PT) | 120W |
| Drain-Source On-State Resistance (RDS(on)) | 0.40Ω (Typ.) / 0.50Ω (Max.) |
| Gate-Source Cutoff Voltage (VGS(off)) | 1.5V (Min.) / 3.5V (Max.) |
| Forward Transfer Admittance (|Yfs|) | 5.0S (Min.) |
| Drain Leakage Current (IDSS) | 100μA (Max.) |
| Gate-Source Leakage Current (IGSS) | ±100nA |
| Input Capacitance (Ciss) | 2000pF (Typ.) |
| Output Capacitance (Coss) | 500pF (Typ.) |
| Reverse Transfer Capacitance (Crss) | 140pF (Typ.) |
| Turn-On Delay Time (td(on)) | 20ns (Typ.) |
| Rise Time (tr) | 35ns (Typ.) |
| Turn-Off Delay Time (td(off)) | 100ns (Typ.) |
| Fall Time (tf) | 35ns (Typ.) |
| Storage Temperature Range | -55°C to +150°C |
| Channel Temperature | 150°C (Max.) |
| Package Type | TO-3P |
| Mounting Style | Through-Hole |
Pin Configuration:
Applications:
- Switching power supplies.
- SMPS repair applications.
- DC-DC converters.
- AC power control systems.
- Motor driver circuits.
- Industrial automation electronics.
- High-voltage switching systems.
- Power inverter circuits.
- Electronic repair projects.
- Educational electronics applications.
package Include:
1x 2SK799 N-Channel MOSFET Power Transistor 450V 12A TO-3P