Name: 60T65PES High Speed IGBT 650V 100A TO-3P
SKU: 3496300110117
Price: 120.00 EGP
Availability: InStock

60T65PES High Speed IGBT 650V 100A TO-3P

60T65PES IGBT 650V 100A TO-3P. High-speed field stop trench IGBT with low loss for PFC, UPS, welder, and solar inverters.

120.00 EGP

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Availability: In Stock

SKU:3496300110117

Categories:IGBT Transistors

Tags:100A, 60T65PES, 650V, IGBT, TO-3P

60T65PES High Speed IGBT 650V 100A TO-3P

The 60T65PES is a High Speed Fieldstop Trench IGBT from MagnaChip Semiconductor, produced using advanced MagnaChip Field Stop Trench IGBT 2nd Generation Technology. This device is designed to provide high efficiency switching behavior together with high ruggedness and excellent quality.

It is especially suitable for applications where low conduction losses are essential, including solar inverter, UPS, IH, welder, and PFC applications. The device supports a collector-emitter voltage of 650V and a DC collector current of 100A at TC = 25°C, with a pulsed collector current of 180A limited by maximum junction temperature.

The IGBT features low saturation voltage, low switching energy, high input impedance, and a maximum operating junction temperature of 175°C. Its diode section is specified with forward current ratings and reverse recovery characteristics, making it useful in high-speed power conversion circuits.

Features

High Speed Switching and Low Power Loss
VCE(sat) = 1.85V typical at IC = 60A
Eoff = 0.53mJ at TC = 25°C
High Input Impedance
trr = 110ns typical at diF/dt = 500A/µs
Maximum Junction Temperature 175°C
Short circuit withstand time: 5µs under specified test conditions
Low conduction loss for high-efficiency power applications
Field Stop Trench IGBT, Second Generation technology

Specifications

Parameter	Value	Conditions / Notes
Maximum Ratings
Collector-Emitter Voltage	650 V	VCE
DC Collector Current	100 A	TC = 25 °C, limited by Tvj max
DC Collector Current	60 A	TC = 100 °C, limited by Tvj max
Pulsed Collector Current	180 A	tp limited by Tvj max
Turn-Off Safe Operating Area	-180 A	VCE ≤ 650 V, Tvj ≤ 175 °C
Diode Forward Current	60 A	TC = 25 °C, limited by Tvj max
Diode Forward Current	30 A	TC = 100 °C, limited by Tvj max
Diode Pulsed Current	200 A	tp limited by Tvj max
Gate-Emitter Voltage	±20 V	VGE
Power Dissipation	428 W	TC = 25 °C
Power Dissipation	214 W	TC = 100 °C
Short Circuit Withstand Time	5 µs	VCC ≤ 400 V, RG = 7 Ω, VGE = 15 V, Tvj = 150 °C
Operating Junction Temperature Range	-40 to 175 °C	Tvj
Storage Temperature Range	-55 to 150 °C	Tstg
Soldering Temperature	260 °C	Wave soldering, 1.6 mm from case for 10 s
Mounting Torque	0.6 Nm maximum	M3 screw
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient	40 °C/W	RθJA
Thermal Resistance, Junction-to-Case, IGBT	0.35 °C/W	RθJC
Thermal Resistance, Junction-to-Case, Diode	1.2 °C/W	RθJC
Static Electrical Characteristics
Collector-Emitter Breakdown Voltage	Min 650 V	IC = 2 mA, VGE = 0 V
Collector-Emitter Saturation Voltage	Typ 1.85 V, Max 2.4 V	IC = 60 A, VGE = 15 V, Tvj = 25 °C
Collector-Emitter Saturation Voltage	Typ 2.6 V	IC = 60 A, VGE = 15 V, Tvj = 175 °C
Diode Forward Voltage	Typ 1.45 V, Max 2.0 V	VGE = 0 V, IF = 25 A, Tvj = 25 °C
Diode Forward Voltage	Typ 1.35 V	VGE = 0 V, IF = 25 A, Tvj = 175 °C
Gate-Emitter Threshold Voltage	Min 4.0 V, Typ 5.0 V, Max 6.0 V	VCE = VGE, IC = 0.5 mA
Zero Gate Voltage Collector Current	Max 40 µA	VCE = 650 V, VGE = 0 V, Tvj = 25 °C
Gate-Emitter Leakage Current	Max ±100 nA	VGE = 20 V, VCE = 0 V
Dynamic Characteristics
Total Gate Charge	Typ 95 nC	VCE = 520 V, IC = 60 A, VGE = 15 V
Gate-Emitter Charge	Typ 19 nC	VCE = 520 V, IC = 60 A, VGE = 15 V
Gate-Collector Charge	Typ 47 nC	VCE = 520 V, IC = 60 A, VGE = 15 V
Input Capacitance	Typ 2327 pF	VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse Transfer Capacitance	Typ 55 pF	VCE = 25 V, VGE = 0 V, f = 1 MHz
Output Capacitance	Typ 270 pF	VCE = 25 V, VGE = 0 V, f = 1 MHz
Internal Emitter Inductance	Typ 13.0 nH	Measured 5 mm from case
Switching Characteristics at Tvj = 25 °C
Turn-On Delay Time	Typ 42 ns	VGE = 15 V, VCC = 400 V, IC = 60 A, RG = 7 Ω, Inductive Load
Rise Time	Typ 54 ns	VGE = 15 V, VCC = 400 V, IC = 60 A, RG = 7 Ω, Inductive Load
Turn-Off Delay Time	Typ 142 ns	VGE = 15 V, VCC = 400 V, IC = 60 A, RG = 7 Ω, Inductive Load
Fall Time	Typ 40 ns	VGE = 15 V, VCC = 400 V, IC = 60 A, RG = 7 Ω, Inductive Load
Turn-On Switching Energy	Typ 0.92 mJ	VGE = 15 V, VCC = 400 V, IC = 60 A, RG = 7 Ω, Inductive Load
Turn-Off Switching Energy	Typ 0.53 mJ	VGE = 15 V, VCC = 400 V, IC = 60 A, RG = 7 Ω, Inductive Load
Total Switching Energy	Typ 1.45 mJ	VGE = 15 V, VCC = 400 V, IC = 60 A, RG = 7 Ω, Inductive Load
Switching Characteristics at Tvj = 175 °C
Turn-On Delay Time	Typ 45 ns	VGE = 15 V, VCC = 400 V, IC = 60 A, RG = 7 Ω, Inductive Load
Rise Time	Typ 58 ns	VGE = 15 V, VCC = 400 V, IC = 60 A, RG = 7 Ω, Inductive Load
Turn-Off Delay Time	Typ 152 ns	VGE = 15 V, VCC = 400 V, IC = 60 A, RG = 7 Ω, Inductive Load
Fall Time	Typ 35 ns	VGE = 15 V, VCC = 400 V, IC = 60 A, RG = 7 Ω, Inductive Load
Turn-On Switching Energy	Typ 1.43 mJ	VGE = 15 V, VCC = 400 V, IC = 60 A, RG = 7 Ω, Inductive Load
Turn-Off Switching Energy	Typ 0.53 mJ	VGE = 15 V, VCC = 400 V, IC = 60 A, RG = 7 Ω, Inductive Load
Total Switching Energy	Typ 1.96 mJ	VGE = 15 V, VCC = 400 V, IC = 60 A, RG = 7 Ω, Inductive Load
Diode Reverse Recovery Characteristics at Tvj = 25 °C
Reverse Recovery Time	Typ 110 ns	IF = 25 A, diF/dt = 500 A/µs
Reverse Recovery Current	Typ 18 A	IF = 25 A, diF/dt = 500 A/µs
Reverse Recovery Charge	Typ 1.10 µC	IF = 25 A, diF/dt = 500 A/µs
Diode Reverse Recovery Characteristics at Tvj = 175 °C
Reverse Recovery Time	Typ 205 ns	IF = 25 A, diF/dt = 500 A/µs
Reverse Recovery Current	Typ 25 A	IF = 25 A, diF/dt = 500 A/µs
Reverse Recovery Charge	Typ 2.67 µC	IF = 25 A, diF/dt = 500 A/µs