7489 64-Bit 3-STATE Random Access Read/Write Memory 3V–15V 100nW
The MM74C89 is a high-performance, 16-word by 4-bit random access memory (RAM). It features four binary address inputs that are internally decoded to select one of the 16 possible word locations. To ensure data stability, an internal address register latches address information on the positive-to-negative transition of the Memory Enable input. A unique characteristic of this device is that it performs a non-destructive read, outputting the complement of the information originally written into the memory. Its 3-STATE data output lines allow for easy memory expansion by connecting multiple units to a common bus.
Features
- Wide Supply Voltage Range
- Ultra-Low Power Consumption
- High Speed
- High Noise Immunity
- TTL Compatibility
- 3-STATE Outputs
Specifications
Absolute Maximum Ratings
| Parameter | Value |
|---|---|
| Supply Voltage (VCC) | 18V |
| Voltage at any Pin | -0.3V to VCC + 0.3V |
| Operating Temperature Range | -40°C to +85°C |
| Storage Temperature Range | -65°C to +150°C |
| Power Dissipation (PDIP) | 700 mW |
DC Electrical Characteristics (VCC = 10V)
| Symbol | Parameter | Min | Max | Units |
|---|---|---|---|---|
| VIN(1) | Logical “1” Input Voltage | 8.0 | – | V |
| VIN(0) | Logical “0” Input Voltage | – | 2.0 | V |
| VOUT(1) | Logical “1” Output Voltage (IO = -10µA) | 9.0 | – | V |
| VOUT(0) | Logical “0” Output Voltage (IO = +10µA) | – | 1.0 | V |
| ICC | Supply Current (VCC = 15V) | – | 300 | µA |
AC Electrical Characteristics (VCC = 10V, CL = 50pF)
| Symbol | Parameter | Typ | Max | Units |
|---|---|---|---|---|
| tACC | Access Time from Address Input | 130 | 280 | ns |
| tSA | Address Setup Time (Min) | 60 | – | ns |
| tHA | Address Hold Time (Min) | 40 | – | ns |
| tWE | Write Enable Pulse Width (Min) | 60 | – | ns |
Applications
- Random Access Memory
- Memory Expansion
- Low-Power Systems
Package Content
- 1 x 7489 64-Bit 3-STATE Random Access Read/Write Memory 3V–15V 100nW