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80N10 N-Channel MOSFET Transistor 100V 100A TO-220
80N10 is a high-current N-channel power MOSFET commonly used for power switching, motor control, DC-DC converters, inverters, and other high-current electronic applications.
30.00 EGP
In stockSKU 3496300156528
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80N10 N-Channel MOSFET Transistor 100V 100A TO-220
The 80N10 is an N-channel TrenchFET® power MOSFET designed for high-current switching applications. According to the supplied datasheet, it has a 100 V drain-source voltage rating and can handle up to 100 A continuous drain current at TC = 25°C, making it suitable for circuits that require high current capability with low conduction losses. Its maximum junction temperature is 175°C, providing a wide operating temperature range.
The device features a very low RDS(on) of 8.5 mΩ at VGS = 10 V and ID = 30 A, while the specified resistance is 15 mΩ at VGS = 6 V and ID = 20 A. It is supplied in a TO-220AB package with three terminals: Gate, Drain, and Source. The datasheet also specifies a ±20 V gate-source voltage rating and a 300 A pulsed drain-current rating.
Features:
- N-channel power MOSFET.
- TrenchFET® technology.
- High-current handling capability.
- Low on-state resistance.
- 175°C maximum junction temperature.
- High pulsed drain-current capability.
- High avalanche-current capability.
- RoHS compliant.
- TO-220AB through-hole package.
Specifications:
| Parameter | Value |
|---|---|
| MOSFET Type | N-Channel |
| Technology | TrenchFET® |
| Drain-Source Voltage (VDS) | 100 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID) @ TC = 25°C | 100 A |
| Continuous Drain Current (ID) @ TC = 125°C | 75 A |
| Pulsed Drain Current (IDM) | 300 A |
| Avalanche Current (IAS) | 75 A |
| Single Pulse Avalanche Energy (EAS) | 280 mJ |
| Maximum Power Dissipation | 250 W |
| Gate Threshold Voltage | 2–4 V |
| RDS(on) @ VGS = 10 V, ID = 30 A | 8.5 mΩ |
| RDS(on) @ VGS = 6 V, ID = 20 A | 15 mΩ |
| RDS(on) @ 125°C | 20 mΩ |
| RDS(on) @ 175°C | 30 mΩ |
| Total Gate Charge | 105 nC typ. / 160 nC max. |
| Input Capacitance (Ciss) | 6550 pF |
| Output Capacitance (Coss) | 665 pF |
| Reverse Transfer Capacitance (Crss) | 265 pF |
| Operating Junction Temperature | -55°C to +175°C |
| Package | TO-220AB |
| Number of Pins | 3 |
Pinout:
| Pin | Name | Function |
|---|---|---|
| 1 | Gate (G) | Controls MOSFET switching |
| 2 | Drain (D) | Main current terminal |
| 3 | Source (S) | Main current return terminal |
Applications:
- DC-DC converters.
- Power supplies.
- Motor controllers.
- Battery-powered equipment.
- Inverters.
- High-current switching circuits.
- Automotive power electronics.
- Power management circuits.
Package Included:
- 1 × 80N10 N-Channel MOSFET Transistor TO-220AB.
Documents:
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