93C56EN 2K-Bit Serial CMOS EEPROM 5V 400µA PDIP-8
The 93C56EN is a 2048‑bit CMOS electrically erasable programmable memory (EEPROM) organized as 128 × 16‑bit registers, fabricated on floating‑gate CMOS process for high speed and low power. It operates from a single 5 V supply, since VPP is generated on‑board. The serial MICROWIRE‑compatible interface (instruction, address and write data on the Data‑In pin; read data and device status on the Data‑Out pin) allows simple interfacing to standard microcontrollers and microprocessors and saves board space in the 8‑pin DIP package.
Features
- 2048 bits of CMOS EEPROM, organized as 128 × 16‑bit registers
- Typical active current 400 µA; typical standby current 25 µA
- Reliable CMOS floating‑gate technology
- 5 V‑only operation in all modes (VPP generated on‑board)
- MICROWIRE‑compatible serial I/O
- Self‑timed programming cycle with device status signal during programming
- Sequential register read
- Over 40 years data retention
- Designed for 100,000 write cycles
- Shipped erased (all bits = logical 1’s)
Specifications
General Specifications
| Parameter |
Specification |
| Device Type |
Serial CMOS EEPROM (Electrically Erasable Programmable Memory) |
| Memory Density |
2048 bits |
| Organization |
128 registers × 16 bits (address bit A7 = “don’t care”) |
| Serial Interface |
MICROWIRE compatible (CS, SK, DI, DO) |
| Supply Voltage (VCC) |
5 V nominal; 4.5 V to 5.5 V operating (VPP generated on-board; 5 V-only operation in all modes) |
| Package |
8-Pin Dual-In-Line (DIP), NS Package Number N08E |
| Ambient Operating Temperature |
−40°C to +85°C (Extended Temperature Range) |
| Instruction Set (7) |
READ, EWEN, ERASE, ERAL, WRITE, WRAL, EWDS |
| Data Retention |
Over 40 years |
| Write Endurance |
Designed for 100,000 write cycles |
DC Electrical Characteristics (VCC = 5 V ±10%)
| Symbol |
Parameter |
Conditions |
Min |
Max |
Units |
| — |
Typical Active Current |
— |
— |
400 (typ) |
µA |
| — |
Typical Standby Current |
— |
— |
25 (typ) |
µA |
| ICC1 |
Operating Current (CMOS Input Levels) |
CS = VIH, SK = 0.5 MHz |
— |
2 |
mA |
| ICC2 |
Operating Current (TTL Input Levels) |
CS = VIH, SK = 0.5 MHz |
— |
3 |
mA |
| ICC3 |
Standby Current |
CS = 0 V |
— |
100 |
µA |
| IL |
Input Leakage |
VIN = 0 V to VCC |
−10 |
10 |
µA |
| IOL |
Output Leakage |
VIN = 0 V to VCC |
−10 |
10 |
µA |
| VIL |
Input Low Voltage |
— |
−0.1 |
0.8 |
V |
| VIH |
Input High Voltage |
— |
2 |
VCC+1 |
V |
| VOL1 |
Output Low Voltage |
IOL = 2.1 mA |
— |
0.4 |
V |
| VOH1 |
Output High Voltage |
IOH = 400 µA |
2.4 |
— |
V |
| VOL2 |
Output Low Voltage |
IOL = 10 µA |
— |
0.2 |
V |
| VOH2 |
Output High Voltage |
IOH = −10 µA |
VCC−0.2 |
— |
V |
AC Electrical Characteristics / Timing (VCC = 5 V ±10%)
| Symbol |
Parameter |
Conditions |
Min |
Max |
Units |
| fSK |
SK Clock Frequency |
— |
0 |
0.5 |
MHz |
| — |
Minimum SK Clock Period |
Note 3 |
2 |
— |
µs |
| tSKH |
SK High Time |
Note 3 |
500 |
— |
ns |
| tSKL |
SK Low Time |
Note 3 |
500 |
— |
ns |
| tCS |
Minimum CS Low Time |
Note 5 |
500 |
— |
ns |
| tCSS |
CS Setup Time |
Relative to SK |
100 |
— |
ns |
| tCSH |
CS Hold Time |
Relative to SK |
0 |
— |
ns |
| tDIS |
DI Setup Time |
Relative to SK |
200 |
— |
ns |
| tDIH |
DI Hold Time |
Relative to SK |
200 |
— |
ns |
| tPD1 |
Output Delay to “1” |
AC Test |
— |
1000 |
ns |
| tPD0 |
Output Delay to “0” |
AC Test |
— |
1000 |
ns |
| tSV |
CS to Status Valid |
AC Test |
— |
1000 |
ns |
| tDF |
CS to DO in TRI-STATE |
AC Test, CS = VIL |
— |
200 |
ns |
| tWP |
Write Cycle Time |
— |
— |
10 |
ms |
Capacitance (TA = 25°C, f = 1 MHz)
| Symbol |
Parameter |
Max |
Units |
| CIN |
Input Capacitance |
5 |
pF |
| COUT |
Output Capacitance |
5 |
pF |
AC Test Conditions
| Parameter |
Condition |
| Output Load |
1 TTL Gate and CL = 100 pF |
| Input Pulse Levels |
0.4 V to 2.4 V |
| Timing Measurement Reference Level — Input |
1 V and 2 V |
| Timing Measurement Reference Level — Output |
0.8 V and 2 V |
Absolute Maximum Ratings
| Parameter |
Rating |
| Ambient Storage Temperature |
−65°C to +150°C |
| All Input or Output Voltages with Respect to Ground |
−0.3 V to +6.5 V |
| Lead Temperature (Soldering, 10 sec.) |
+300°C |
| ESD Rating |
2000 V |
Applications
- Microcontroller/Microprocessor Data Storage
- Space-Constrained Circuit Boards
- Low-Power & Portable Electronics
- Legacy System Upgrades & Replacements
- Industrial & Harsh-Environment Equipment
Package Content
- 1 x 93C56EN 2K-Bit Serial CMOS EEPROM 5V 400µA PDIP-8
DataSheet
