Silan 50T65FD1 IGBT with Fast Recovery Diode 650V 50A TO-3P
50T65FD1: 650V 50A Field Stop IGBT with fast recovery diode, TO-3P. Low loss, fast switching for induction heating, UPS, SMPS, PFC.
95.00 EGP
In stockSKU 3496300159413
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Silan 50T65FD1 IGBT with Fast Recovery Diode 650V 50A TO-3P
The SGT50T65FD1PN is a 650V, 50A field stop IGBT with a co-packaged fast recovery diode (FRD), manufactured using advanced Field Stop IV IGBT technology. Housed in a 3-pin TO-3P package, it offers optimum performance for induction heating, UPS, SMPS and PFC applications.
The device combines low conduction loss — a typical collector-emitter saturation voltage of only 2.2V at IC = 50A — with fast switching (recommended operating frequency of 10–60 kHz) and high input impedance. The integrated fast recovery diode features a typical forward voltage of 1.95V at IF = 25A and a typical reverse recovery time of just 33ns.
Features
- 50A, 650V ratings — VCE(sat) (typ.) = 2.2V @ IC = 50A
- Field Stop IV IGBT technology
- Low conduction loss
- Fast switching — recommended frequency: 10–60 kHz
- High input impedance
- Co-packaged fast recovery diode (trr = 33ns typ., Qrr = 65nC typ.)
- High current capability: IC = 100A @ TC = 25°C; pulsed ICM = 150A
- Power dissipation up to 235W @ TC = 25°C
- Wide operating junction & storage temperature range: −55°C to +150°C
Specifications
| 1 – Product Identification | |||
|---|---|---|---|
| Parameter | Symbol | Value / Rating | Conditions / Notes |
| Part Number | – | SGT50T65FD1PN | — |
| Marking Code | – | 50T65FD1 | — |
| Package | – | TO-3P | — |
| Integrated Diode | – | Fast Recovery Diode (FRD) | — |
| 2 – Absolute Maximum Ratings (TC = 25°C unless otherwise noted) | |||
| Collector to Emitter Voltage | VCE | 650 V | – |
| Gate to Emitter Voltage | VGE | ±20 V | – |
| Transient G-E Voltage | VGEM | ±30 V | – |
| Collector Current | IC | 100 A | TC = 25°C |
| Collector Current | IC | 50 A | TC = 100°C |
| Pulsed Collector Current | ICM | 150 A | – |
| Diode Current | IF | 25 A | – |
| Power Dissipation | PD | 235 W | TC = 25°C |
| Operating Junction Temperature | TJ | -55 to +150 °C | – |
| Storage Temperature | Tstg | -55 to +150 °C | – |
| 3 – Thermal Characteristics | |||
| Thermal Resistance, Junction to Case (IGBT) | RθJC | 0.53 °C/W | – |
| Thermal Resistance, Junction to Case (FRD) | RθJC | 1.48 °C/W | – |
| 4 – Electrical Characteristics – IGBT (TC = 25°C unless otherwise noted) | |||
| Collector to Emitter Breakdown Voltage | BVCE | 650 V (min.) | VGE = 0 V, IC = 250 µA |
| C-E Leakage Current | ICES | 200 µA (max.) | VCE = 650 V, VGE = 0 V |
| G-E Leakage Current | IGES | ±400 nA (max.) | VGE = 20 V, VCE = 0 V |
| G-E Threshold Voltage | VGE(th) | 4.0 / 5.0 / 6.5 V (min./typ./max.) | IC = 250 µA, VCE = VGE |
| Collector to Emitter Saturation Voltage | VCE(sat) | 2.2 V (typ.) / 2.6 V (max.) | IC = 50 A, VGE = 15 V, TC = 25°C |
| Collector to Emitter Saturation Voltage | VCE(sat) | 2.4 V (typ.) | IC = 50 A, VGE = 15 V, TC = 125°C |
| Input Capacitance | Cies | 4532 pF (typ.) | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Output Capacitance | Coes | 90 pF (typ.) | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Reverse Transfer Capacitance | Cres | 41 pF (typ.) | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| 5 – Switching Characteristics – IGBT (VCE = 400 V, IC = 50 A, Rg = 10 Ω, VGE = 15 V, Inductive Load) | |||
| Turn-On Delay Time | Td(on) | 45 ns (typ.) | – |
| Rise Time | Tr | 145 ns (typ.) | – |
| Turn-Off Delay Time | Td(off) | 125 ns (typ.) | – |
| Fall Time | Tf | 130 ns (typ.) | – |
| Turn-On Switching Loss | Eon | 2.8 mJ (typ.) | – |
| Turn-Off Switching Loss | Eoff | 1.0 mJ (typ.) | – |
| Total Switching Loss | Est | 3.8 mJ (typ.) | – |
| Total Gate Charge | Qg | 145 nC (typ.) | VCE = 400 V, IC = 50 A, VGE = 15 V |
| Gate to Emitter Charge | Qge | 48 nC (typ.) | VCE = 400 V, IC = 50 A, VGE = 15 V |
| Gate to Collector Charge | Qgc | 46 nC (typ.) | VCE = 400 V, IC = 50 A, VGE = 15 V |
| 6 – Electrical Characteristics – Fast Recovery Diode (TC = 25°C unless otherwise noted) | |||
| Diode Forward Voltage | VFM | 1.95 V (typ.) | IF = 25 A, TC = 25°C |
| Diode Forward Voltage | VFM | 1.7 V (typ.) | IF = 25 A, TC = 125°C |
| Diode Reverse Recovery Time | Trr | 33 ns (typ.) | IEC = 25 A, dIEC/dt = 200 A/µs |
| Diode Reverse Recovery Charge | Qrr | 65 nC (typ.) | IEC = 25 A, dIEC/dt = 200 A/µs |
Applications
- Induction heating
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies (SMPS)
- Power factor correction (PFC)
Package Content
- 1 x Silan 50T65FD1 IGBT with Fast Recovery Diode 650V 50A TO-3P
DataSheet
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