KGT15N60FDA IGBT Transistor TO-220F
The KGT15N60FDA IGBT Transistor TO-220F is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching in various applications. It features a collector-emitter breakdown voltage of 600V, a continuous collector current of 15A, and a power dissipation of 41.6W, making it ideal for industrial and automotive systems. Housed in a TO-220F package, it offers excellent thermal performance and ease of mounting on printed circuit boards. Utilizing Non-Punch Through Trench technology, the KGT15N60FDA provides low switching losses, high energy efficiency, and robust avalanche and short-circuit ruggedness, ensuring reliable operation in demanding environments.
Features:
- High Breakdown Voltage 600V collector-emitter voltage rating for high-voltage applications.
- High Collector Current 15A continuous current handling for robust performance.
- Low Saturation Voltage 1.7V at 15A (typical) for efficient power management.
Specifications:
|
Category |
IGBT Transistors |
|
Collector-Emitter Breakdown Voltage |
600V |
|
Collector Current |
15A @ 25°C |
|
Power Dissipation (Pd) |
41.6W |
|
Collector-Emitter Saturation Voltage |
1.7V @ 15A, TC=25°C |
|
Gate-Emitter Voltage |
±20V |
|
Gate-Emitter Threshold Voltage |
7V @ 1mA |
|
Rise Time |
20ns |
|
Output Capacitance |
90pF |
|
Total Gate Charge (Qg) |
70nC |
|
Maximum Junction Temperature (Tj) |
150°C |
|
Operating Temperature Range |
-55°C to +85°C |
|
Package |
TO-220F |
Pin Configuration:
| Pin | Name | Description |
|---|---|---|
| 1 | Gate (G) | Gate Control Terminal |
| 2 | Collector (C) | Collector Terminal |
| 3 | Emitter (E) | Emitter Terminal |
Applications:
- Inverters & UPS Systems.
- Motor Drives.
