G40T120FUH IGPT Transistor 1200V 40A TO-247
The G40T120FUH IGBT Transistor in TO-247 package is a high-performance power semiconductor device developed using advanced Trench Field Stop (T-FS) technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche ruggedness, making the device highly suitable for demanding power electronics applications.
Features:
- Advanced Trench Field Stop (T-FS) technology.
- High voltage capability up to 1200V.
- Low collector-emitter saturation voltage.
- Fast switching performance for high-frequency operation.
- Integrated fast recovery anti-parallel diode.
Specifications:
| Parameter | Value |
|---|---|
| Transistor Type | IGBT |
| Collector-Emitter Voltage (Vces) | 1200V |
| Collector Current (Ic @100°C) | 40A |
| Collector Current (Ic @25°C) | 80A |
| Pulsed Collector Current (Icm) | 160A |
| Gate-Emitter Voltage (Vge) | ±20V |
| Collector-Emitter Saturation Voltage (Vce(sat)) | 1.9Vtyp (2.4Vmax) |
| Gate Threshold Voltage (Vge(th)) | 5.0–6.5V |
| Power Dissipation (Pd) | 367W |
| Input Capacitance (Ciss) | 3560pF |
| Output Capacitance (Coss) | 150pF |
| Reverse Transfer Capacitance (Crss) | 90pF |
| Total Gate Charge (Qg) | 245nC |
| Operating Temperature Range (Tj) | -55°C to +150°C |
| Package Type | TO-247 |
Dimensions:
Pin Configuration:
Applications:
- Uninterruptible Power Supplies (UPS).
- Welding converters.
- High-frequency switching converters.
- Industrial power inverters.
- Power factor correction systems.
- Motor drive applications.
- Renewable energy conversion systems.
Package Include:
1x G40-T120FUH IGPT Transistor 1200V 40A TO-247
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