K75EEH5 IGBT Transistor 650V 75A PG-TO247-3
The K75EEH5 is the device marking for the Infineon IKW75N65EH5, a high-speed insulated-gate bipolar transistor (IGBT) designed for power electronics applications. It uses TRENCHSTOP 5 technology and incorporates a fast, soft-recovery antiparallel diode, helping improve switching efficiency and performance in suitable power conversion circuits.
This IGBT is suitable for high-power switching designs that require efficient control of electrical energy. Typical applications include solar power converters, uninterruptible power supplies, welding converters, and medium- to high-frequency switching converters. Proper gate-drive design, thermal management, and compliance with the manufacturer’s operating limits are essential for reliable operation.
efficiency and reliability.
Features
- High Efficiency.
- Advanced Technology.
- Seamless Integration.
- Thermal Robustness.
- Low Gate Charge.
Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCE | 650 | V |
| DC Collector Current (TC=100°C) | IC | 75 | A |
| Pulsed Collector Current | ICpuls | 300 | A |
| Collector-Emitter Saturation Voltage (Tvj=25°C) | VCEsat | 1.65 | V |
| Diode Forward Current (TC=100°C) | IF | 75 | A |
| Gate-Emitter Voltage | VGE | ±20 | V |
| Total Power Dissipation (TC=25°C) | Ptot | 395 | W |
| Max Junction Temperature | Tvjmax | 175 | °C |
| Package Type | – | PG-TO247-3 | – |
Pinout:
Applications
- Solar Converters.
- Uninterruptible Power Supplies (UPS).
- Welding Converters.
- Mid to High Range Switching Frequency Converters.
Package Content
- 1 x K75EEH5 IGBT Transistor 650V 75A PG-TO247-3.
