Specifications
Product Attribute | Attribute Value |
Product Category: | Bipolar Transistors – BJT |
Mounting Style: | Through Hole |
Package/Case: | TO-92-3 |
Transistor Polarity: | NPN |
Configuration: | Single |
Collector-Emitter Voltage VCEO Max: | 45 V |
Collector- Base Voltage VCBO: | 45 V |
Emitter- Base Voltage VEBO: | 5 V |
Collector-Emitter Saturation Voltage: | 500 mV |
Maximum DC Collector Current: | 1 A |
Pd – Power Dissipation: | 1 W |
Gain Bandwidth Product fT: | 100 MHz |
Minimum Operating Temperature: | – 65 C |
Maximum Operating Temperature: | + 150 C |
Continuous Collector Current: | 1 A |
DC Collector/Base Gain hFE Min: | 40 |
DC Current Gain hFE Max: | 250 |
Product Type: | BJTs – Bipolar Transistors |
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