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BC639 High Current NPN Transistor 80V 1A TO-92

BC639 is a high-current NPN transistor commonly used for switching and amplifier circuits in electronic and control applications.

1.50 EGP

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SKU:4739928014979
BC639 High Current NPN Transistor 80V 1A TO-92

The BC639 is an NPN epitaxial silicon transistor designed for switching and amplifier applications. It provides a collector current rating of up to 1A, making it suitable for driving moderate-current loads and as a general-purpose transistor in electronic circuits. The device is supplied in a compact TO-92 package.

The BC639 offers an 80V collector-emitter voltage rating, a peak collector current of 1.5A, and a maximum collector power dissipation of 1W. It features a DC current gain of up to 160 under the specified test conditions and a collector-emitter saturation voltage of up to 0.5V at 500mA collector current.

Specifications:
Specification Value
Transistor Type NPN
Semiconductor Material Silicon
Collector-Emitter Voltage (VCEO) 80V
Collector-Emitter Voltage (VCES) 100V
Collector-Emitter Voltage at RBE = 1kΩ (VCER) 100V
Emitter-Base Voltage (VEBO) 5V
Collector Current (IC) 1A
Peak Collector Current (ICP) 1.5A
Base Current (IB) 100mA
Collector Power Dissipation (PC) 1W
Junction Temperature (TJ) 150°C
Storage Temperature -65 to +150°C
DC Current Gain (hFE) at IC = 5mA 40–250
DC Current Gain (hFE) at IC = 150mA 40–160
Collector-Emitter Saturation Voltage 0.5V max.
Base-Emitter On Voltage 1V max.
Current Gain Bandwidth Product (fT) 100MHz
Package TO-92
Pinout:

Pin Number Pin Name Description
1 Emitter Electrons emitted from the emitter into the first PN junction
2 Collector Electrons Emitted from Emitter Collected by the Collector
3 Base Controls the biasing of the transistor
Applications:
  • Electronic switching circuits.
  • Relay and load drivers.
  • Signal amplification.
  • General-purpose amplifier circuits.
  • Control circuits.
  • Moderate-current switching stages.
Packages Included:
  • 1 × BC639 High Current NPN Transistor 80V 1A TO-92.
Documents:
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