Manufacturer | Nexperia |
Mfr. Part # | BC857BS,115 |
Package | SOT-363 |
Datasheet | Nexperia-BC857BS-115 |
Description | 45V 200mW 200@2mA,5V 100mA PNP SOT-363-6 Bipolar (BJT) ROHS |
Specifications
Attribute | Value |
Category | Transistors/Bipolar Transistors – BJT |
Datasheet | Nexperia-BC857BS-115 |
RoHS | |
Collector Cut-Off Current (Icbo) | 15nA |
Collector-Emitter Breakdown Voltage (Vceo) | 45V |
Power Dissipation (Pd) | 200mW |
Collector Current (Ic) | 100mA |
DC Current Gain (hFE@Ic,Vce) | 200@2mA,5V |
Transition Frequency (fT) | 100MHz |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@100mA,5mA |
Transistor Type | PNP |
Operating Temperature | +150℃@(Tj) |
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