BCM847BS,115 M1t NPN Bipolar Transistors – BJT SOT-363 (TSSOP-6)
The BCM847BS is an NPN/NPN matched double transistor housed in a compact SOT-363 (TSSOP-6) surface-mount plastic package. It is designed for high-performance applications, offering efficient functionality in a wide range of electronic circuits. This transistor features fully isolated transistors internally, ensuring reliable operation in various configurations, such as current mirrors and differential amplifiers. It is a drop-in replacement for standard double transistors and is widely used in automotive and other industrial applications.
The BCM847BS offers current gain matching and base-emitter voltage matching, making it suitable for precision applications. With its small form factor and high power handling capabilities, it can effectively handle up to 100mA of collector current and 45V collector-emitter voltage, making it ideal for systems that require compact, high-efficiency components. The transistor is also AEC-Q101 qualified, ensuring that it meets automotive-grade standards for use in automotive applications.
Due to its precise matching characteristics, the BCM847BS is particularly useful in circuits requiring matched pairs for stable operation. This includes applications like current mirrors and differential amplifiers where high precision is required for proper signal processing. Its small package size makes it easy to integrate into compact designs, making it a go-to choice for modern electronics.
Features:
- Current Gain Matching: Ensures uniformity between the matched pairs for high-precision applications.
- Base-Emitter Voltage Matching: Provides stable and consistent performance in circuits.
- Drop-in Replacement: Can easily replace standard double transistors in various designs.
- AEC-Q101 Qualified: Meets automotive-grade standards for reliability and quality.
- Small Package Size: Ideal for compact electronic systems, fitting into smaller spaces.
Specifications:
| Product Attribute | Attribute Value |
| Product Category: | Bipolar Transistors – BJT |
| Mounting Style: | SMD/SMT |
| Package/Case: | TSSOP-6 |
| Transistor Polarity: | NPN |
| Configuration: | Dual |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector- Base Voltage VCBO: | 50 V |
| Emitter- Base Voltage VEBO: | 6 V |
| Collector-Emitter Saturation Voltage: | 200 mV |
| Maximum DC Collector Current: | 100 mA |
| Pd – Power Dissipation: | 300 mW |
| Gain Bandwidth Product fT: | 250 MHz |
| Minimum Operating Temperature: | – 65 C |
| Maximum Operating Temperature: | + 150 C |
| DC Collector/Base Gain hFE Min: | 200 at 2 mA, 5 V |
| DC Current Gain hFE Max: | 200 at 2 mA, 5 V |
| Product Type: | BJTs – Bipolar Transistors |
Pinout Diagram:
Footprint Diagram:
Applications:
- Current Mirror.
- Differential Amplifier.
Package Contents:
- 1x BCM847BS,115 M1t NPN Bipolar Transistors – BJT SOT-363 (TSSOP-6)





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