BD649 NPN Bipolar Transistors – BJT (100V 8A 62.5W) TO-220

Specifications:

• Type Designator: BD649
• Material of Transistor: Si
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 62.5 W
• Maximum Collector-Base Voltage |Vcb|: 120 V
• Maximum Collector-Emitter Voltage |Vce|: 100 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Maximum Collector Current |Ic max|: 8 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Forward Current Transfer Ratio (hFE), MIN: 750
• Package: TO-220

BD649 Datasheet