BD649 NPN Power Transistor: High-Current, High-Gain Performance for Audio and Power Applications
Specifications:
- Type Designator: BD649
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 62.5 W
- Maximum Collector-Base Voltage |Vcb|: 120 V
- Maximum Collector-Emitter Voltage |Vce|: 100 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 8 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Forward Current Transfer Ratio (hFE), MIN: 750
- Package: TO-220
Applications:
- Audio Amplifiers: Used in high-power audio amplifier circuits for efficient signal amplification.
- Switching Regulators: Employed in power supply circuits for efficient switching operations.
- Motor Drivers: Utilized in controlling motors in various industrial and consumer applications.
- Complementary Push-Pull Circuits: Ideal for use in complementary push-pull amplifier configurations.
