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Bipolar Transistors – BJT NPN TO-3PL C3998

60.00 EGP

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Availability: In Stock
SKU:4937331859556
Features
  • High Switching Speed
  • High Breakdown Voltage-: V(BR)CBO= 1500V(Min)
Applications

Designed for horizontal deflection output applications.

Mfr. Part # 2SC3998
Package TO-3PL
Datasheet 2SC3998
Description 10uA 800V 250W 4@20A,5V 25A 5V@20A,5A NPN +150℃@(Tj) TO-3PL Bipolar Transistors – BJT ROHS
Specifications
Attribute Value
Category Triode/MOS Tube/Transistor/Bipolar Transistors – BJT
Datasheet 2SC3998
RoHS
Collector Cut-Off Current (Icbo) 10uA
Collector-Emitter Breakdown Voltage (Vceo) 800V
Power Dissipation (Pd) 250W
DC Current Gain (hFE@Ic,Vce) 4@20A,5V
Collector Current (Ic) 25A
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 5V@20A,5A
Transistor Type NPN
Operating Temperature +150℃@(Tj)

 

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