Specifications:
- Type Designator: BUH1015
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 160 W
- Maximum Collector-Base Voltage |Vcb|: 1500 V
- Maximum Collector-Emitter Voltage |Vce|: 700 V
- Maximum Emitter-Base Voltage |Veb|: 10 V
- Collector Current (DC): 14A
- Maximum Collector Current |Ic max|: 18 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Forward Current Transfer Ratio (hFE), TYP: 10
- Package: TO-3PN
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