The BUW12A is a high-performance Silicon NPN Power Transistor, housed in a standard TO-3PN package. It features high voltage rating capabilities, fast switching speed, and low collector saturation voltage, making it ideally suited for demanding switching and industrial electronic applications.
Features
High Voltage Capability
Fast Switching Speed
Low Saturation Voltage
Specifications
Absolute Maximum Ratings (Ta = 25°C)
Symbol
Parameter
Conditions
Value
Unit
VCBO Collector-Base Voltage
Open Emitter
1000
V
VCEO Collector-Emitter Voltage
Open Base
450
V
VEBO Emitter-Base Voltage
Open Collector
9
V
IC Collector Current
Continuous
8
A
ICM Collector Current (Peak)
Peak
20
A
IB Base Current
Continuous
4
A
PT Total Power Dissipation
Tc = 25°C
125
W
Tj Junction Temperature
—
150
°C
Tstg Storage Temperature
—
-65 to 175
°C
Thermal Characteristics
Symbol
Parameter
Max
Unit
Rth j-c Thermal Resistance, Junction to Case
1.2
°C/W
Electrical Characteristics (Tj = 25°C unless specified)
Symbol
Parameter
Conditions
Min
Max
Unit
VCEO(SUS) Collector-Emitter Sustaining Voltage
IC = 0.1A; IB = 0; L = 25mH
450
—
V
VCEsat Collector-Emitter Saturation Voltage
IC = 6A; IB = 1.2A
—
1.5
V
VBEsat Base-Emitter Saturation Voltage
IC = 6A; IB = 1.2A
—
1.5
V
ICES Collector Cut-Off Current
VCE = 1000V; VBE = 0
—
1.0
mA
IEBO Emitter Cut-Off Current
VEB = 9V; IC = 0
—
10
mA
hFE DC Current Gain
VCE = 5V; IC = 1A
15
50
—
Switching Times (Resistive Load)
Conditions: VCC = 240V, IC = 6A, IB1 = -IB2 = 1.2A
Symbol
Parameter
Max
Unit
ton Turn-on Time
1.0
µs
ts Storage Time
4.0
µs
tf Fall Time
0.8
µs
Applications
Specially intended for operating in industrial applications .
Package Content
1 x BUW12A NPN Power Transistor 1000V 8A TO-3PN
DataSheet
