BUX98C Bipolar Transistor BJT NPN High Volt Power TO-3 Made in Malaysia
The BUX98C is a robust Silicon Multi-Epitaxial Mesa NPN transistor housed in a hermetically sealed JEDEC TO-3 metal case. Engineered for high-power applications, this transistor excels in demanding industrial environments. Its design is optimized for use in switching and linear applications, particularly those operating from single and three-phase mains.
Features:
- High Voltage Capability.
- High Current Capability.
- Fast Switching Speed.
- High Power Dissipation.
- Robust TO-3 Package.
Specifications:
| Parameter | Value | Unit |
|---|---|---|
| Transistor Polarity: | NPN | – |
| Collector-Emitter Voltage (VCEO): | 700 | V |
| Collector-Emitter Voltage (VCES): | 1200 | V |
| Collector-Base Voltage (VCBO): | 1200 | V |
| Emitter-Base Voltage (VEBO): | 7 | V |
| Continuous Collector Current (IC): | 30 | A |
| Peak Collector Current (ICM): | 60 | A |
| Total Power Dissipation (Ptot) @ Tc=25°C: | 250 | W |
| Max. Operating Junction Temperature (Tj): | 200 | °C |
| Package Type: | TO-3 | – |
Applications:
- High-Frequency and High-Efficiency Converters.
- Linear and Switching Industrial Equipment.
- Power Amplifiers.
- Motor Control Circuits.
Package Contents:
- 1x BUX98C Bipolar Transistor BJT NPN High Volt Power TO-3