BUZ20 ST N Channel Power MOSFET Transistor TO-220
The BUZ20 ST N Channel Power MOSFET Transistor TO-220 is a robust and efficient enhancement-mode MOSFET designed for high-speed switching and power control applications. Built using silicon gate technology, this device offers excellent performance with low on-resistance and high current handling capability.
Features:
- N-Channel enhancement mode for positive gate drive control.
- Avalanche-rated for enhanced ruggedness in switching applications.
- Very fast switching speeds for high-efficiency operation.
- Low drain-source on-resistance of 0.2Ω.
- High input impedance for easy direct drive from integrated circuits.
Specifications:
| Parameter | Value |
|---|---|
| Model Number | BUZ20 |
| Component Description | N-Channel Power MOSFET Transistor |
| Package Type | TO-220AB |
| Drain-Source Voltage (VDS) | 100V |
| Continuous Drain Current (ID) | 13.5A (at TC=28°C) |
| Pulsed Drain Current (IDpuls) | 54A (at TC=25°C) |
| Gate-Source Voltage (VGS) | ±20V |
| Drain-Source On-Resistance (RDS(on)) | 0.2Ω max (at VGS=10V, ID=8.5A) |
| Power Dissipation (Ptot) | 75W (at TC=25°C) |
| Operating Junction Temperature (TJ) | -55°C to +150°C |
| Input Capacitance (Ciss) | 400pF typ. |
| Output Capacitance (Coss) | 120pF typ. |
| Reverse Transfer Capacitance (Crss) | 70pF typ. |
| Turn-On Delay Time (td(on)) | 10ns typ. |
| Rise Time (tr) | 45ns typ. |
| Turn-Off Delay Time (td(off)) | 55ns typ. |
| Fall Time (tf) | 40ns typ. |
| Thermal Resistance, Junction-to-Case (RthJC) | ≤1.67K/W |
Pin Configuration:
Applications:
- DC-DC converters and switching power supplies.
- Motor control and drive circuits.
- Automotive and industrial power switching.
- Battery chargers and inverters.
- Solenoid and relay drivers.
- High-efficiency power management systems.
- Audio amplifier output stages.
Package Include:
1x BUZ20 ST N Channel Power MOSFET Transistor TO-220.